Semiconductor device including oxide semiconductor with an insulating film including galliium and oxygen

• US 9,755,082 B2
• Filed: 06/06/2011
• Issued: 09/05/2017
• Est. Priority Date: 06/11/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Smoot, Stephen W
• Assistant Examiner(s): Booker, Vicki B
• Application Number:
  US13/153,919
• Publication Number:
  US 20110303914A1
• Time in Patent Office: 2,283 Days
• Field of Search: 257 43, 257E29095, 257E29101
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

One object is to provide a semiconductor device including an oxide semiconductor with improved electrical characteristics. The semiconductor device includes a first insulating film including an element of Group 13 and oxygen; an oxide semiconductor film partly in contact with the first insulating film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; and a second insulating film partly in contact with the oxide semiconductor film, between the oxide semiconductor film and the gate electrode. Further, the first insulating film including an element of Group 13 and oxygen includes a region where an amount of oxygen is greater than that in a stoichiometric composition ratio.

Claims

1. A semiconductor device comprising:

a gate electrode;

a first insulating film including gallium and oxygen over the gate electrode;

an oxide semiconductor film over the first insulating film; and

a second insulating film including gallium and oxygen over the oxide semiconductor film,

wherein the first insulating film is in contact with a first face of the oxide semiconductor film,

wherein the second insulating film is in contact with a second face of the oxide semiconductor film,

wherein the first insulating film is a gallium oxide film, and

wherein the second insulating film is a gallium oxide film.

2. The semiconductor device according to claim 1, wherein the first insulating film comprises a region where an amount of oxygen is greater than an amount of oxygen in a stoichiometric composition ratio.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor film includes at least one of In, Ga, and Zn.

4. The semiconductor device according to claim 1, further comprising:

a source electrode and a drain electrode over the oxide semiconductor film,

wherein the second insulating film is formed over the source electrode and the drain electrode,

wherein the source electrode and the drain electrode are electrically connected to the oxide semiconductor film.

5. The semiconductor device according to claim 1, further comprising:

a source electrode and a drain electrode over the first insulating film,

wherein the oxide semiconductor film is formed over the source electrode and the drain electrode,

wherein the source electrode and the drain electrode are electrically connected to the oxide semiconductor film.

6. A semiconductor device comprising:

a gate electrode;

a first insulating film including gallium and oxygen over the gate electrode;

an oxide semiconductor film over the first insulating film; and

a second insulating film including gallium and oxygen over the oxide semiconductor film,

wherein the first insulating film is in contact with a first face of the oxide semiconductor film,

wherein the second insulating film is in contact with a second face of the oxide semiconductor film,

wherein the first insulating film is a gallium aluminum oxide film or an aluminum gallium oxide film, and

wherein the second insulating film is a gallium aluminum oxide film or an aluminum gallium oxide film.

7. The semiconductor device according to claim 6, wherein the second insulating film comprises a region where an amount of oxygen is greater than an amount of oxygen in a stoichiometric composition ratio.

8. The semiconductor device according to claim 6, wherein the oxide semiconductor film includes at least one of In, Ga, and Zn.

9. The semiconductor device according to claim 6, further comprising:

a source electrode and a drain electrode over the oxide semiconductor film,

wherein the second insulating film is formed over the source electrode and the drain electrode,

wherein the source electrode and the drain electrode are electrically connected to the oxide semiconductor film.

10. The semiconductor device according to claim 6, further comprising:

a source electrode and a drain electrode over the first insulating film,

wherein the oxide semiconductor film is formed over the source electrode and the drain electrode,

wherein the source electrode and the drain electrode are electrically connected to the oxide semiconductor film.

11. A semiconductor device comprising:

a gate electrode;

a first insulating film including gallium and oxygen over the gate electrode;

an oxide semiconductor film over the first insulating film; and

a second insulating film including gallium and oxygen over the oxide semiconductor film,

wherein the first insulating film is in contact with a first face of the oxide semiconductor film, and

wherein the second insulating film is in contact with a second face of the oxide semiconductor film.

12. The semiconductor device according to claim 11, wherein at least one of the first insulating film and the second insulating film comprises a region where an amount of oxygen is greater than an amount of oxygen in a stoichiometric composition ratio.

13. The semiconductor device according to claim 11, wherein the oxide semiconductor film includes at least one of In, Ga, and Zn.

14. The semiconductor device according to claim 11, further comprising:

a source electrode and a drain electrode over the oxide semiconductor film,

wherein the second insulating film is formed over the source electrode and the drain electrode,

wherein the source electrode and the drain electrode are electrically connected to the oxide semiconductor film.

15. The semiconductor device according to claim 11, further comprising:

a source electrode and a drain electrode over the first insulating film,

wherein the oxide semiconductor film is formed over the source electrode and the drain electrode,

wherein the source electrode and the drain electrode are electrically connected to the oxide semiconductor film.

16. The semiconductor device according to claim 11, wherein the oxide semiconductor film is surrounded by the first insulating film and the second insulating film.