Environmental protection film for thin film devices

• US 9,761,830 B1
• Filed: 12/24/2014
• Issued: 09/12/2017
• Est. Priority Date: 05/14/2012
• Status: Active Grant

• Current Assignee: Eclipse Energy Systems Inc.
• Original Assignee: Eclipse Energy Systems Inc.
• Inventors: Demiryont, Hulya
• Primary Examiner(s): Jiang, Lisha
• Application Number:
  US14/582,563
• Time in Patent Office: 993 Days
• Field of Search: None
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

A protective film for a thin film device comprises a composite inorganic film that may be deposited on a parylene film or deposited directly on the device. Optionally, additional parylene and composite inorganic protective films may be added. The composite inorganic protective film is on the order of 1-100 nm thick and contains a material (e.g., Si) that forms a tenacious oxide at room temperature. When the device is exposed to air after deposition of the composite inorganic film, the oxidizable species oxidizes and fills voids to create an effective diffusion barrier.

Claims

1. A method of making a diffusion barrier film for a device, the method comprising:

depositing, via electron beam evaporation, a composite inorganic film on a substrate while the substrate is in a first environment, wherein

the first environment is a vacuum environment;

a temperature of the first environment remains below 80 degrees Celsius during the depositing via electron beam evaporation; and

the composite inorganic film includes;

a dielectric layer including a dielectric material;

a first oxidizable layer including a first tenacious oxide forming material, the first oxidizable layer being in direct intimate contact with a first of two surfaces of the dielectric layer; and

a second oxidizable layer including a second tenacious oxide forming material, the second oxidizable layer being in direct intimate contact with a second of two surfaces of the dielectric layer;

removing the substrate having the composite inorganic film deposited thereon from the vacuum environment;

introducing the substrate having the composite inorganic film deposited thereon to a second environment different from the vacuum environment; and

exposing, while the substrate having the composite inorganic film deposited thereon is in the second environment, the first oxidizable layer and the second oxidizable layer of the composite inorganic film to a source of oxygen for a period of time to respectively oxidize the first oxidizable layer and the second oxidizable layer, thereby respectively forming a first barrier layer and a second barrier layer of the diffusion barrier film.

2. The method of claim 1, wherein the first oxidizable layer, dielectric layer, and second oxidizable layer are deposited during a single evacuation cycle while in the vacuum environment.

3. The method of claim 1, wherein the second environment is a non-vacuum environment, the non-vacuum environment being at approximately 21 percent oxygen, approximately 50 percent humidity, and approximately 22 degrees Celsius.

4. The method of claim 1, wherein the first oxidizable layer, once deposited via electron beam evaporation, has a porosity that corresponds to void spaces within the first oxidizable layer;

and

the oxidation of the first oxidizable layer while in the second environment fills the void spaces, thereby causing the first oxidizable layer to form the first barrier layer.

5. The method of claim 1, wherein the oxidation of the first oxidizable layer outside the vacuum environment increases a transmittance level of the first oxidizable layer.

6. The method of claim 1, wherein the diffusion barrier film provides anti-reflective properties, the anti-reflective properties of the diffusion barrier film being due in part to an index of refraction of the dielectric layer.

7. The method of claim 1, wherein the substrate includes:

an optoelectronic device; and

a smoothing layer, the smoothing layer being in direct intimate contact with the optoelectronic device and having the composite inorganic film deposited thereon.

8. The method of claim 7, wherein the optoelectronic device is an organic light-emitting diode device.

9. The method of claim 1, further comprising, prior to removing the substrate having the composite inorganic film from the vacuum environment, depositing a parylene film on the composite inorganic film.

10. The method of claim 1, further comprising, prior to removing the substrate having the composite inorganic film from the vacuum environment, depositing an optoelectronic device on the composite inorganic film.

11. The method of claim 1, wherein the first tenacious oxide forming material is at least one of silicon, aluminum, chromium, nickel, and titanium;

and

the dielectric material is at least one of alumina, titania, chromium oxide, silicon nitride, silicon dioxide, and silicon oxynitride.

12. A method of making a diffusion barrier film for an optoelectronic device, the method comprising:

depositing a smoothing layer on the optoelectronic device while the optoelectronic device is in an environment different from a first environment and a second environment;

depositing, via electron beam evaporation, a composite inorganic film on the smoothing layer while the optoelectronic device is in the first environment, wherein

the first environment is a vacuum environment;

a temperature of the first environment remains below 80 degrees Celsius during the depositing via electron beam evaporation; and

the composite inorganic film includes;

a dielectric layer including a dielectric material;

a first oxidizable layer including a first tenacious oxide forming material, the first oxidizable layer being in direct intimate contact with a first of two surfaces of the dielectric layer and having a porosity that corresponds to void spaces therein; and

a second oxidizable layer including a second tenacious oxide forming material, the second oxidizable layer being in direct intimate contact with a second of two surfaces of the dielectric layer and having a porosity that corresponds to void spaces therein;

removing the optoelectronic device having the smoothing layer and the composite inorganic film deposited thereon from the vacuum environment;

introducing the optoelectronic device having the smoothing layer and the composite inorganic film deposited thereon to the second environment, the second environment being a non-vacuum environment that is different from the vacuum environment; and

exposing, while the optoelectronic device having the smoothing layer and the composite inorganic film deposited thereon is in the second environment, the first and second oxidizable layers of the composite inorganic film to a source of oxygen for a period of time to oxidize the first and second oxidizable layers, wherein said oxidation of the first and second oxidizable layers fills the respective void spaces of the first and second oxidizable layers, thereby causing the first and second oxidizable layers to form first and second barrier layers of the diffusion barrier film.