Light emitting device

• US 9,768,367 B2
• Filed: 04/27/2016
• Issued: 09/19/2017
• Est. Priority Date: 08/28/2014
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Chae, Jong Hyeon, Lee, So Ra, Ye, Kyung Hee
• Primary Examiner(s): Harrison, Monica D
• Application Number:
  US15/140,155
• Publication Number:
  US 20160240759A1
• Time in Patent Office: 510 Days
• Field of Search: 257 99
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

Claims

1. A light emitting device, comprising:

a first bonding pad configured to be soldered to a mounting substrate;

a first electrode electrically connected to the first bonding pad via a first connection electrode;

a first conductive type semiconductor layer connected to the first electrode; and

a solder ball contactable region and a non-conductive region,

wherein;

the first bonding pad comprises at least two elongate, opposed regions disposed in the solder ball contactable region; and

the non-conductive region is disposed between the at least two elongate, opposed regions.

2. The light emitting device of claim 1, wherein at least two of the elongate, opposed regions of the first bonding pad are separated from each other.

3. The light emitting device of claim 1, wherein at least two of the elongate, opposed regions of the first bonding pad are connected to each other.

4. The light emitting device of claim 1, wherein the first bonding pad comprises:

n number of elongate, opposed regions;

at least n−

1 connection portions connecting the n number of elongate, opposed regions to each other; and

n is a natural number greater than 2.

5. The light emitting device of claim 1, wherein each of the at least two elongate, opposed regions have a width equal to or less than 200 μ

m.

6. The light emitting device of claim 1, wherein each of the at least two elongate, opposed regions have a width equal to or greater than 40 μ

m.

7. The light emitting device of claim 1, wherein the ratio of an area of the at least two elongate, opposed regions to an area of the solder ball contactable region is equal to or greater than 40%.

8. The light emitting device of claim 1, further comprising:

a second bonding pad separated from the first bonding pad;

a second electrode connected to the second bonding pad via a second connection electrode; and

a second conductive type semiconductor layer connected to the second electrode.

9. The light emitting device of claim 8, further comprising:

an upper insulation layer disposed on the first electrode,

wherein the first connection electrode is formed in an opening of the upper insulation layer.

10. The light emitting device of claim 8, further comprising:

a lower insulation layer disposed on the second electrode; and

an upper insulation layer disposed on the first electrode,

wherein the second connection electrode is formed in openings of the lower insulation layer and the upper insulation layer.

11. The light emitting device of claim 8, further comprising:

an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being divided into at least two sections.

12. The light emitting device of claim 8, further comprising:

a nitride-based semiconductor stack comprising;

the first conductive type semiconductor layer;

the second conductive type semiconductor layer;

an active layer disposed between the first and second conductive type semiconductor layers; and

holes penetrating through the second conductive type semiconductor layer and the active layer to expose a portion of the first conductive type semiconductor layer,

wherein;

the first electrode contacts the first conductive type semiconductor layer through the holes; and

a portion of the first electrode disposed in the holes is covered by the first bonding pad.

13. The light emitting device of claim 12, wherein:

the holes comprise;

a first hole;

a second hole separated from the first hole; and

a third hole connected to the second hole and extending from the second hole; and

a width of the third hole is less than each widths of the first hole and the second hole.

14. The light emitting device of claim 13, wherein the first bonding pad covers a portion of the first electrode disposed in the first hole and the second hole.

15. The light emitting device of claim 14, wherein:

the third hole extends from the second hole towards the second bonding pad; and

at least a portion of the third hole is disposed under and between the first and second bonding pads.

16. A light emitting device, comprising:

a first bonding pad configured to be soldered to a mounting substrate;

a first electrode electrically connected to the first bonding pad via a first connection electrode; and

a first conductive type semiconductor layer connected to the first electrode,

wherein;

the first bonding pad is disposed in a portion of a solder ball contactable region; and

a non-conductive pattern is disposed in the remaining portion of the solder ball contactable region, through which by-products generated during soldering escape.

17. The light emitting device of claim 16, wherein the non-conductive pattern is formed within a distance of 200 μ

m from a point within the first bonding pad towards a periphery of the solder ball contactable region.

18. The light emitting device of claim 17, wherein the non-conductive pattern has a tapered shape gradually widening towards the periphery of the solder ball contactable region.

19. The light emitting device of claim 16, wherein the ratio of an area of the first bonding pad to an area of the solder ball contactable region is equal to or greater than 40%.

20. The light emitting device of claim 16, further comprising:

a second bonding pad separated from the first bonding pad;

a second electrode electrically connected to the second bonding pad via a second connection electrode; and

a second conductive type semiconductor layer connected to the second electrode.

21. The light emitting device of claim 20, further comprising:

an upper insulation layer disposed on the first side,

wherein the first connection electrode is formed in an opening of the upper insulation layer.

22. The light emitting device of claim 20, further comprising:

a lower insulation layer disposed on the second electrode; and

an upper insulation layer disposed on the first electrode,

wherein the second connection electrode is formed in openings of the lower insulation layer and the upper insulation layer.

23. The light emitting device of claim 20, further comprising:

an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being divided into at least two sections.