Semiconductor device having an impurity concentration and method of manufacturing thereof
First Claim
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1. A semiconductor device, comprising:
- a silicon body having opposite first and second sides, a first part of the silicon body adjoining the first side and a second part of the silicon body being disposed between the first part and the second side and a transition region between the first and second parts,wherein an average concentration of one of nitrogen and carbon in the first part is less than 60% of an average concentration of the one of nitrogen and carbon in the second part;
wherein a vertical distance between the first side and the second part ranges between 10 μ
m and 200 μ
m and wherein a ratio of an average gradient α
2 of the concentration of the one of nitrogen and carbon in the transition region and an average gradient α
1 of the concentration of the one of nitrogen and carbon in the first part is greater than 3.
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Abstract
A method of manufacturing a semiconductor device includes irradiating the semiconductor body with particles through a first side of the semiconductor body, removing at least a part of impurities from an irradiated part of the semiconductor body by out-diffusion during thermal treatment in a temperature range between 450° C. to 1200° C., and forming a first load terminal structure at the first side of the semiconductor body.
32 Citations
7 Claims
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1. A semiconductor device, comprising:
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a silicon body having opposite first and second sides, a first part of the silicon body adjoining the first side and a second part of the silicon body being disposed between the first part and the second side and a transition region between the first and second parts, wherein an average concentration of one of nitrogen and carbon in the first part is less than 60% of an average concentration of the one of nitrogen and carbon in the second part; wherein a vertical distance between the first side and the second part ranges between 10 μ
m and 200 μ
m and wherein a ratio of an average gradient α
2 of the concentration of the one of nitrogen and carbon in the transition region and an average gradient α
1 of the concentration of the one of nitrogen and carbon in the first part is greater than 3. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification