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Semiconductor device having an impurity concentration and method of manufacturing thereof

  • US 9,793,362 B2
  • Filed: 07/27/2016
  • Issued: 10/17/2017
  • Est. Priority Date: 06/19/2014
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a silicon body having opposite first and second sides, a first part of the silicon body adjoining the first side and a second part of the silicon body being disposed between the first part and the second side and a transition region between the first and second parts,wherein an average concentration of one of nitrogen and carbon in the first part is less than 60% of an average concentration of the one of nitrogen and carbon in the second part;

    wherein a vertical distance between the first side and the second part ranges between 10 μ

    m and 200 μ

    m and wherein a ratio of an average gradient α

    2 of the concentration of the one of nitrogen and carbon in the transition region and an average gradient α

    1 of the concentration of the one of nitrogen and carbon in the first part is greater than 3.

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