Semiconductor device

  • US 9,799,666 B2
  • Filed: 03/08/2016
  • Issued: 10/24/2017
  • Est. Priority Date: 02/19/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a circuit, the circuit comprising:

  • a first transistor comprising;

    a first semiconductor layer;

    a first gate insulating layer over the first semiconductor layer; and

    a first gate electrode over the first gate insulating layer;

    an insulating layer over the first semiconductor layer; and

    a second transistor comprising;

    a second gate electrode;

    a second gate insulating layer over the second gate electrode, the second gate insulating layer comprising part of the insulating layer; and

    a second semiconductor layer over the second gate insulating layer,wherein the first semiconductor layer includes silicon,wherein the second semiconductor layer includes an oxide semiconductor,wherein the second gate electrode is formed from a same layer as the first gate electrode, andwherein the first gate electrode is electrically connected to one of a source and a drain of the second transistor.

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