Chemical device with thin conductive element
First Claim
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1. A chemical device, comprising:
- a chemically-sensitive field effect transistor including a floating gate structure comprising a plurality of floating gate conductors electrically coupled to one another;
a dielectric layer overlying the floating gate structure;
a conductive via formed through the dielectric layer and in electrical communication with an uppermost floating gate conductor of the plurality of floating gate conductors, the conductive via having a width less than the uppermost floating gate conductor;
a conductive element overlying and in communication with the uppermost floating gate conductor in the plurality of floating gate conductors through the conductive via, the conductive element wider and thinner than the uppermost floating gate conductor; and
a dielectric material defining an opening extending to an upper surface of the conductive element.
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Abstract
In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.
574 Citations
20 Claims
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1. A chemical device, comprising:
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a chemically-sensitive field effect transistor including a floating gate structure comprising a plurality of floating gate conductors electrically coupled to one another; a dielectric layer overlying the floating gate structure; a conductive via formed through the dielectric layer and in electrical communication with an uppermost floating gate conductor of the plurality of floating gate conductors, the conductive via having a width less than the uppermost floating gate conductor; a conductive element overlying and in communication with the uppermost floating gate conductor in the plurality of floating gate conductors through the conductive via, the conductive element wider and thinner than the uppermost floating gate conductor; and a dielectric material defining an opening extending to an upper surface of the conductive element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for manufacturing a chemical device, the method comprising:
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forming a chemically-sensitive field effect transistor including a floating gate structure comprising a plurality of floating gate conductors electrically coupled to one another; forming a dielectric layer overlying the floating gate structure; forming a conductive via formed through the dielectric layer and in electrical communication with an uppermost floating gate conductor of the plurality of floating gate conductors, the conductive via having a width less than the uppermost floating gate conductor; forming a conductive element overlying and in communication with the uppermost floating gate conductor in the plurality of floating gate conductors through the conductive via, the conductive element wider and thinner than the uppermost floating gate conductor; and forming a dielectric material defining an opening extending to an upper surface of the conductive element. - View Dependent Claims (18, 19, 20)
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Specification