Optical amplifier including multi-section gain waveguide

• US 9,825,429 B1
• Filed: 05/22/2017
• Issued: 11/21/2017
• Est. Priority Date: 02/05/2014
• Status: Active Grant

• Current Assignee: Openlight Photonics Incorporated
• Original Assignee: Aurrion, Inc. (Juniper Networks Incorporated)
• Inventors: Norberg, Erik, Koch, Brian R., Fish, Gregory Alan
• Primary Examiner(s): Torres, Juan A
• Application Number:
  US15/601,139
• Time in Patent Office: 183 Days
• Field of Search: 398 79
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/1014 Tapered waveguide, e.g. spotsize converter H01S5/1064 takes precedence
• CPC Class Codes: H01S 5/1028 Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
• CPC Class Codes: H01S 5/1032 Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/50 Amplifier structures not provided for in groups H01S5/02 - H01S5/30
• CPC Class Codes: H01S 5/5027 Concatenated amplifiers, i.e. amplifiers in series or cascaded
• CPC Class Codes: H04B 10/25 Arrangements specific to fibre transmission
• CPC Class Codes: H04B 10/66 Non-coherent receivers, e.g. using direct detection
• CPC Class Codes: H04J 14/02 Wavelength-division multiplex systems

Abstract

Described herein are methods, systems, and apparatuses to utilize a semiconductor optical amplifier (SOA) comprising a silicon layer including a silicon waveguide, a non-silicon layer disposed on the silicon layer and including a non-silicon waveguide, first and second mode transition region comprising tapers in the silicon waveguide and/or the non-silicon waveguide for exchanging light between the waveguide, and a plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide such that confinement factors for the non-silicon waveguide in each of the plurality of regions differ.

Claims

1. An optical amplifier, comprising:

a silicon layer forming a silicon waveguide;

a gain waveguide positioned on the silicon layer, the gain waveguide comprising;

a first transition region to receive light from the silicon waveguide;

a gain region to amplify the light received from the first transition region, the first transition region tapering toward the gain region; and

a guide region to guide the amplified light into the silicon waveguide via a second transition region, the second transition region tapering toward the guide region; and

at least one electrical contact configured to apply current to the gain region to vary an optical gain of the gain region.

2. The optical amplifier of claim 1, wherein at least one of the silicon waveguide or the gain waveguide vary in cross-sectional size at the first transition region.

3. The optical amplifier of claim 1, wherein at least one of the silicon waveguide or the gain waveguide vary in cross-sectional size at the second transition region.

4. The optical amplifier of claim 1, wherein the gain waveguide increases in cross-sectional size from the first transition region to the second transition region.

5. The optical amplifier of claim 2, wherein the gain waveguide increases in cross-sectional size from a first end of the gain waveguide through the first transition region.

6. The optical amplifier of claim 3, wherein the gain waveguide increases in cross-sectional size from a second end of the gain waveguide through the second transition region.

7. The optical amplifier of claim 4, wherein the gain waveguide continuously increases in cross-sectional size from the first transition region to the second transition region.

8. The optical amplifier of claim 4, wherein the gain waveguide includes a plurality of sections between the first transition region and the second transition region, each section having a uniform cross-sectional size along its length, the cross-sectional sizes of the sections increasing from the first transition region to the second transition region.

9. The optical amplifier of claim 7, wherein the at least one electrical contact comprises a single electrical contact configured to apply the current through the gain region in the gain waveguide.

10. The optical amplifier of claim 7, wherein the at least one electrical contact comprises a plurality of discrete electrical contacts configured to apply the current through the gain region in the gain waveguide, the plurality of discrete electrical contacts being spaced apart along a path parallel to the gain waveguide.

11. The optical amplifier of claim 8, wherein the at least one electrical contact comprises a single electrical contact configured to apply the current through the gain region in the gain waveguide.

12. The optical amplifier of claim 8, wherein the at least one electrical contact comprises a plurality of discrete electrical contacts configured to apply the current through the gain region in the gain waveguide, the plurality of discrete electrical contacts being spaced apart along a path parallel to the gain waveguide.

13. The optical amplifier of claim 10, further comprising at least one electrical isolation region positioned to electrically isolate the plurality of discrete electrical contacts from one another.

14. The optical amplifier of claim 12, wherein the plurality of discrete electrical contacts are matched to the plurality of sections in a one-to-one correspondence, such that each electrical contact is positioned to apply current to a single section of the gain waveguide.

15. The optical amplifier of claim 12, further comprising at least one electrical isolation region positioned to electrically isolate the plurality of discrete electrical contacts from one another.

16. A method for amplifying light, the method comprising:

directing first light in a silicon waveguide;

coupling the first light from the silicon waveguide to a gain region of a gain waveguide via a first transition region that tapers towards the gain region;

amplifying the first light in the gain region to form second light;

coupling the second light from the gain region to the silicon waveguide via a second transition region that tapers towards the gain region; and

applying current to the gain region to vary an optical gain of the gain region.

17. The method of claim 16, wherein amplifying the first light in the gain region to form the second light comprises applying current through gain material in the gain region.

18. The method of claim 16, wherein the gain waveguide increases in cross-sectional size from the first transition region to the second transition region.

19. An optical amplifier, comprising:

a silicon layer forming a silicon waveguide;

a gain waveguide positioned on the silicon layer, the gain waveguide comprising;

a first transition region to receive light from the silicon waveguide;

a gain region to amplify the light received via the first transition, the first transition region tapering towards the gain region; and

a guide region to guide the amplified light into the silicon waveguide via a second transition region, the second transition region tapering towards the guide region,

the gain waveguide increasing in cross-sectional size from the first transition region to the second transition region; and

at least one electrical contact configured to apply current to the gain region to vary an optical gain of the gain region, the at least one electrical contact extending along a path parallel to the gain waveguide.

20. The optical amplifier of claim 19, wherein:

the gain waveguide includes a plurality of sections between the first transition region and the second transition region, each section having a uniform cross-sectional size along its length, the cross-sectional sizes of the sections increasing from the first transition region to the second transition region;

the at least one electrical contact comprises a plurality of discrete electrical contact matched to the plurality of sections in a one-to-one correspondence, such that each electrical contact is positioned to apply current to a single section of the gain waveguide, the plurality of discrete electrical contacts being spaced apart along a path parallel to the gain waveguide; and

further comprising at least one electrical isolation region positioned to electrically isolate the plurality of discrete electrical contact from one another.