Substrate processing apparatus and substrate processing method

• US 9,828,676 B2
• Filed: 06/17/2016
• Issued: 11/28/2017
• Est. Priority Date: 07/18/2012
• Status: Active Grant

• Current Assignee: Screen Semiconductor Solutions Co., Ltd. (SCREEN Holdings Co., Ltd.)
• Original Assignee: Screen Semiconductor Solutions Co., Ltd. (SCREEN Holdings Co., Ltd.)
• Inventors: Harumoto, Masahiko, Miyagi, Tadashi, Inagaki, Yukihiko, Kaneyama, Koji
• Primary Examiner(s): FULLER, RODNEY EVAN
• Application Number:
  US15/185,177
• Publication Number:
  US 20160289839A1
• Time in Patent Office: 529 Days
• Field of Search: 396611
• CPC Class Codes: B05C 11/00 Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00 means for manipulating or holding work B05C13/00; enclosures for apparatus, booths B05C15/00; spray booths B05B16/00
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G03F 7/162 Coating on a rotating support, e.g. using a whirler or a spinner
• CPC Class Codes: G03F 7/20 Exposure; Apparatus therefor photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: G03F 7/3021 from a wafer supported on a rotating chuck
• CPC Class Codes: G03F 7/32 Liquid compositions therefor, e.g. developers
• CPC Class Codes: H01J 37/02 Details
• CPC Class Codes: H01L 21/0335 characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/0338 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67126 Apparatus for sealing, encapsulating, glassing, decapsulating or the like processes H01L23/02, H01L23/28
• CPC Class Codes: H01L 21/6715 Apparatus for applying a liquid, a resin, an ink or the like H01L21/67126 takes precedence
• CPC Class Codes: H01L 21/67178 vertical arrangement

Abstract

An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Claims

1. A substrate processing method, comprising the steps of:

supplying a coating liquid that includes a directed self assembly material constituted by two types of polymers onto a substrate to form a film made of the directed self assembly material on the substrate by a coater;

supplying an evaporated solvent to the substrate with the film formed thereon by a solvent supplier;

performing thermal processing on the substrate with the film formed thereon by a heater; and

irradiating the film on the substrate after the supply of the solvent and after the thermal processing with light by a light emitter,

wherein the step of irradiating the film includes irradiating the substrate stored in a casing with light.

2. The substrate processing method according to claim 1, wherein the step of irradiating the film includes switching a light irradiation state.

3. The substrate processing method according to claim 1, wherein the step of performing the thermal processing includes causing microphase separation in the film to form a first pattern made of one of the two types of polymers and a second pattern made of the other polymer.

4. The substrate processing method according to claim 3, wherein the step of irradiating the flim includes cutting a coupling of the one polymer and the other polymer to separate the first pattern and the second pattern.

5. The substrate processing method according to claim 3, wherein the step of supplying the solvent includes swelling the film to promote the microphase separation.

6. The substrate processing method according to claim 1, wherein the solvent includes one or plurality of toluene, heptane, acetone, propylene glycol monomethylether acetate, propylene glycol monomethylether, cyclohexanone, carbon disulfide and tetrahydrofuran.

7. The substrate processing method according to claim 1, wherein the two types of polymers include any of a combination of polystyrene and polymethylmethacrylate, a combination of polystyrene and polydimethylsiloxane, a combination of polyethylene and polyferrocenyl dimethylsilane, a combination of polystyrene and polyethylene oxide, a combination of polystyrene and polyvinylpyridine, a combination of polyethylene and polyhydroxystyrene, and a combination of polymethyl methacrylate and polymethacrylate containing polyhedral oligomeric silsesquioxane.

8. The substrate processing method according to claim 7, wherein the two types of polymers are incompatible with each other.

9. The substrate processing method according to claim 1, wherein the step of performing the thermal processing includes thermally processing the substrate at a temperature in a range from not lower than room temperature to not higher than thermal decomposition temperature of a polymer chain constituting the directed self assembly material.

10. The substrate processing method according to claim 1, further comprising the step of performing cooling processing on the substrate before the step of forming the film, and the step of performing cooling processing on the substrate after the step of performing the thermal processing by the heater and before the step of irradiating the film.

11. The substrate processing method according to claim 1, wherein the step of performing the thermal processing by the heater includes forming a first pattern made of one of the two types of polymers and a second pattern made of the other polymer by the thermal processing,

the substrate processing method further comprising the step of removing the second pattern from the substrate by performing development processing on the film after the step of irradiating the film.

12. The substrate processing method according to claim 11, wherein the step of removing the second pattern includes performing the development processing by supplying to the substrate at least one of toluene, heptane, acetone, propylene glycol monomethylether acetate, propylene glycol monomethylether, cyclohexanone, acetic acid and tetrahydrofuran as a development liquid.

13. The substrate processing method according to claim 11, wherein the step of removing the second pattern includes performing the development processing by dry etching.

14. A substrate processing method comprising the steps of:

supplying a coating liquid that includes a directed self assembly material constituted by two types of polymers onto a substrate to form a film made of the directed self assembly material on the substrate by a coater;

supplying an evaporated solvent to the substrate with the film formed thereon by a solvent supplier;

performing thermal processing on the substrate with the film formed thereon by a heater; and

irradiating the film on the substrate after the supply of the solvent and after the thermal processing with light by a light emitter,

wherein the step of performing the thermal processing includes causing microphase separation in the film to form a first pattern made of one of the two types of polymers and a second pattern made of the other polymer, and

the step of irradiating the film includes cutting a coupling of the one polymer and the other polymer to separate the first pattern and the second pattern.

15. The substrate processing method according to claim 14, wherein the step of irradiating the film includes switching a light irradiation state.

16. The substrate processing method according to claim 14, further comprising the step of performing cooling processing on the substrate before the step of forming the film, and the step of performing cooling processing on the substrate after the step of performing the thermal processing by the heater and before the step of irradiating the film.

17. The substrate processing method according to claim 14, wherein the step of performing the thermal processing by the heater includes forming the first pattern made of the one of the two types of polymers and the second pattern made of the other polymer by the thermal processing,

the substrate processing method further comprising the step of removing the second pattern from the substrate by performing development processing on the film after the step of irradiating the film.

18. A substrate processing method, comprising the steps of:

supplying a coating liquid that includes a directed self assembly material constituted by two types of polymers onto a substrate to form a film made of the directed self assembly material on the substrate by a coater;

supplying an evaporated solvent to the substrate with the film formed thereon by a solvent supplier;

performing thermal processing on the substrate with the film formed thereon by a heater; and

irradiating the film on the substrate after the supply of the solvent and after the thermal processing with light by a light emitter,

wherein the step of irradiating the film includes switching a light irradiation state.

19. The substrate processing method according to claim 18, further comprising the step of performing cooling processing on the substrate before the step of forming the film, and the step of performing cooling processing on the substrate after the step of performing the thermal processing by the heater and before the step of irradiating the film.

20. The substrate processing method according to claim 18, wherein the step of performing the thermal processing by the heater includes forming a first pattern made of one of the two types of polymers and a second pattern made of the other polymer by the thermal processing,

the substrate processing method further comprising the step of removing the second pattern from the substrate by performing development processing on the film after the step of irradiating the film.