Conductive structure and manufacturing method thereof, array substrate, display device

• US 9,837,502 B2
• Filed: 08/24/2015
• Issued: 12/05/2017
• Est. Priority Date: 04/03/2015
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Tian, Hongwei, Ma, Kaihong, Xu, Wenqing, Zuo, Yueping, Xu, Xiaowei
• Primary Examiner(s): Nguyen, Cuong Q
• Assistant Examiner(s): Yasmeen, Nishath
• Application Number:
  US14/907,778
• Publication Number:
  US 20170040430A1
• Time in Patent Office: 834 Days
• Field of Search: None
• CPC Class Codes: H01L 21/28008 Making conductor-insulator-semiconductor electrodes
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41 characterised by their shape, relative sizes or dispositions
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

A conductive structure and a manufacturing method thereof, an array substrate and a display device. The conductive structure includes a plurality of first metal layers made of aluminum, and between every two first metal layers that are adjacent, there is also provided a second metal layer, which is made of a metal other than aluminum. With the conductive structure, the hillock phenomenon that happens to the conductive structure when it is heated can be decreased without reducing the overall thickness of the conductive structure.

Claims

1. A conductive structure, comprising at least two first metal layers made of pure aluminum, and a second metal layer made of a metal other than aluminum and provided between every two first metal layers that are adjacent,

wherein densities of two adjacent first metal layers differ.

2. The conductive structure according to claim 1, wherein, each of the second metal layers has a thickness in a range of 3 nm to 8 nm.

3. The conductive structure according to claim 1, wherein, each of the first metal layers has a thickness in a range of 200 angstroms to 2800 angstroms.

4. The conductive structure according to claim 1, wherein, a number of the first metal layers included in the conductive structure is 2 to 4.

5. The conductive structure according to claim 1, further comprising a third metal layer made of Ti or Mo and a fourth metal layer made of Ti or Mo, and each of the first metal layers and each of the second metal layers are each located between the third metal layer and the fourth metal layer.

6. The conductive structure according to claim 1, wherein, a material of the second metal layer is any one or more selected from the group consisting of Ag, Cu, MoTa, MoNb and Ti.

7. An array substrate, comprising a gate line, a data line, a source electrode, a drain electrode, and a gate electrode, at least one of the gate line, the data line, the source electrode, the drain electrode and the gate electrode being the conductive structure according to claim 1.

8. A display device, comprising the array substrate according to claim 7.

11. The array substrate according to claim 7, wherein, each of the second metal layers has a thickness in a range of 3 nm to 8 nm.

12. The array substrate according to claim 7, wherein, each of the first metal layers has a thickness in a range of 200 angstroms to 2800 angstroms.

13. The array substrate according to claim 7, wherein, a number of the first metal layers included in the conductive structure is 2 to 4.

14. The array substrate according to claim 7, further comprising a third metal layer made of Ti or Mo and a fourth metal layer made of Ti or Mo, and each of the first metal layers and each of the second metal layers are each located between the third metal layer and the fourth metal layer.

9. A manufacturing method of a conductive structure, comprising fabricating a plurality of first metal layers on a substrate by using pure aluminum, and fabricating a second metal layer between every two adjacent first metal layers by using a metal than other aluminum,

wherein densities of two adjacent first metal layers differ.

10. The manufacturing method of the conductive structure according to claim 9, further comprising fabricating a third metal layer on the substrate by using Ti or Mo before fabricating of the plurality of first metal layers on the substrate by using aluminum, and fabricating of the second metal layer between every two adjacent first metal layers by using the metal other than aluminum;

and

fabricating a fourth metal layer by using Ti or Mo after fabricating of the plurality of first metal layers on the substrate by using aluminum, and fabricating of the second metal layer between every two adjacent first metal layers by using the metal other than aluminum.