Resistance-switching device having conductive fiber, fabric type resistance-switching device array having the same, memory and sensor having the device or the array

• US 9,853,219 B2
• Filed: 07/18/2016
• Issued: 12/26/2017
• Est. Priority Date: 07/17/2015
• Status: Active Grant

• Current Assignee: Kookmin University
• Original Assignee: Kookmin University
• Inventors: Lee, Mijung, Seo, Youngdae, Kim, Chaewon, Ko, Museok, Jo, Anjae, Kim, Younhee, Kim, Suji, Kim, Heejoo
• Primary Examiner(s): Rodela, Eduardo A
• Application Number:
  US15/213,352
• Publication Number:
  US 20170033291A1
• Time in Patent Office: 526 Days
• CPC Class Codes: A41D 1/005 with embedded cable or connector
• CPC Class Codes: A41D 2500/10 Knitted
• CPC Class Codes: A41D 2500/20 Woven
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: D03D 1/0088 Fabrics having an electronic function
• CPC Class Codes: D03D 15/275 Carbon fibres
• CPC Class Codes: D03D 15/56 elastic
• CPC Class Codes: D03D 15/67 Metal wires
• CPC Class Codes: D04B 1/24 wearing apparel
• CPC Class Codes: D10B 2101/12 Carbon; Pitch
• CPC Class Codes: D10B 2101/20 Metallic fibres
• CPC Class Codes: D10B 2401/16 antistatic; conductive
• CPC Class Codes: D10B 2501/00 Wearing apparel
• CPC Class Codes: H10K 10/50 Bistable switching devices
• CPC Class Codes: H10K 85/221 Carbon nanotubes
• CPC Class Codes: H10N 70/20 Multistable switching devices, e.g. memristors
• CPC Class Codes: H10N 70/24 based on migration or redistribution of ionic species, e.g. anions, vacancies
• CPC Class Codes: H10N 70/801 Constructional details of multistable switching devices
• CPC Class Codes: H10N 70/883 Oxides or nitrides
• CPC Class Codes: H10N 70/8833 : Binary metal oxides, e.g. TaOx
• CPC Class Codes: H10N 70/8836 : Complex metal oxides, e.g. perovskites, spinels

Abstract

Provided is a resistance-switching device. The resistance-switching device includes a first wiring including an aluminum oxide surface layer, and a second wiring including a carbon-containing surface layer in contact with the aluminum oxide surface layer. Electrochemical reaction products according to a reaction of aluminum oxide and carbon are generated or destroyed at a contact interface between the aluminum oxide surface layer and the carbon-containing surface layer according to a voltage or a current applied to the first wiring and the second wiring, and low resistance and high resistance are provided between the first wiring and the second wiring by the generation or destruction of the electrochemical reaction products.

Claims

1. A resistance-switching device comprising:

a first wiring including an aluminum oxide surface layer and an aluminum layer below the aluminum oxide surface layer, wherein the aluminum oxide surface layer is a native oxide film of the aluminum layer; and

a second wiring including a carbon-containing surface layer in contact with the aluminum oxide surface layer,

wherein;

electrochemical reaction products according to a reaction of aluminum oxide and carbon are generated or destroyed at a contact interface between the aluminum oxide surface layer and the carbon-containing surface layer according to a voltage or a current applied to the first wiring and the second wiring; and

low resistance and high resistance are provided between the first wiring and the second wiring by the generation or destruction of the electrochemical reaction products.

2. The device of claim 1, wherein at least one of the first wiring and the second wiring has a linear structure.

3. The device of claim 2, wherein both of the first wiring and the second wiring have a linear structure.

4. The device of claim 1, wherein the first wiring further includes a base layer below the aluminum layer.

5. The device of claim 1, wherein the second wiring is a carbon fiber.

7. The device of claim 1, wherein the first wiring and the second wiring serve as a wrap and a weft, respectively, and constitute a fabric having a woven structure.

8. The device of claim 1, further including an insulating support,

wherein:

the first wiring includes a plurality of rows disposed in parallel, and the rows are disposed by repeatedly being extended on an upper surface of the insulating support, passed through the insulating support, extended on a lower surface of the insulating support, and then passed through the insulating support again; and

the second wiring is disposed by repeatedly being extended on the upper surface of the insulating support to cross a first row of the first wiring, passed through the insulating support, extended on the lower surface of the insulating support to cross a second row of the first wiring, and then passed through the insulating support again.

9. The device of claim 1, wherein:

any one of the first wiring and the second wiring has a knitted structure; and

the other of the first wiring and the second wiring is disposed to cross the knitted wiring.

10. The device of claim 1, wherein the resistance-switching device is a unit cell constituting a resistance-switching memory.

11. The device of claim 1, wherein the resistance-switching device is a sensor, and the high resistance shows different values according to an ambient environment.

12. The device of claim 11, wherein the ambient environment is a degree of stretching the sensor.

13. The device of claim 11, wherein the ambient environment is an oxygen concentration or humidity of an ambient environment.

14. A garment which is combined with the resistance-switching device of claim 1.

6. A resistance-switching device comprising:

a first wiring including an aluminum oxide surface layer; and

a second wiring including a carbon-containing surface layer in contact with the aluminum oxide surface layer,

wherein;

electrochemical reaction products according to a reaction of aluminum oxide and carbon are generated or destroyed at a contact interface between the aluminum oxide surface layer and the carbon-containing surface layer according to a voltage or a current applied to the first wiring and the second wiring;

low resistance and high resistance are provided between the first wiring and the second wiring by the generation or destruction of the electrochemical reaction products; and

the electrochemical reaction products are aluminum oxycarbide.

15. A resistance-switching device comprising:

a first conductive fiber including an aluminum oxide surface layer and an aluminum layer below the aluminum oxide surface layer, wherein the aluminum oxide surface layer is a native oxide film of the aluminum layer; and

a second conductive fiber including a carbon-containing surface layer in contact with the aluminum oxide surface layer,

wherein the first conductive fiber and the second conductive fiber are woven or knitted, or have a fabric type which is combined on another insulating support by being stitched thereto.

16. The device of claim 15, wherein the second conductive fiber is a carbon fiber.