Thin film transistor, method for manufacturing the same, and semiconductor device

  • US 9,859,306 B2
  • Filed: 08/16/2016
  • Issued: 01/02/2018
  • Est. Priority Date: 02/20/2009
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a gate electrode and a capacitor wiring over a substrate;

    a gate insulating layer over and in contact with the gate electrode and the capacitor wiring;

    an oxide semiconductor layer over the gate insulating layer;

    a first electrode layer and a second electrode layer in electrical contact with the oxide semiconductor layer;

    an interlayer insulating layer over the oxide semiconductor layer, the first electrode layer and the second electrode layer; and

    a pixel electrode over the interlayer insulating layer and in direct contact with the second electrode layer,wherein the capacitor wiring is overlapped with the first electrode layer and the pixel electrode.

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