Double-side polishing method

• US 9,862,072 B2
• Filed: 10/21/2013
• Issued: 01/09/2018
• Est. Priority Date: 11/13/2012
• Status: Active Grant

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Asai, Kazumasa
• Primary Examiner(s): Carter, Monica
• Assistant Examiner(s): BERONJA, LAUREN M
• Application Number:
  US14/425,607
• Publication Number:
  US 20150209931A1
• Time in Patent Office: 1,541 Days
• CPC Class Codes: B24B 37/005 Control means for lapping machines or devices
• CPC Class Codes: B24B 37/08 for double side lapping
• CPC Class Codes: B24B 49/03 according to the final size of the previously ground workpiece
• CPC Class Codes: B24B 49/12 involving optical means
• CPC Class Codes: H01L 21/02024 Mirror polishing
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

The invention provides a double-side polishing method including first polishing at a high polishing rate, second polishing at a low polishing rate, dividing a straight line extending between the outermost circumferences of the wafer through the center into prescribed sections, and optically measuring a cross-sectional shape of the sections; applying a weight predetermined for each section to the cross-sectional shape to quantify flatness of each section; and determining polishing conditions of the first and second polishing in subsequent polishing on a basis of the quantified flatness, wherein a beam diameter of a measurement apparatus used to measure the cross-sectional shape of outermost sections is smaller than that used to measure the cross-sectional shape of the other section. The method can measure the shape of the wafer up to its outermost circumference with high precision without reducing productivity, and improve the flatness of the entire wafer including its outermost circumference.

Claims

1. A double-side polishing method comprising a polishing cycle that comprises:

performing a first polishing step of carrying out a double-side polishing process at a high polishing rate, the double-side polishing process simultaneously polishing both surfaces of a wafer that is held with a carrier and interposed between polishing pads each attached on upper and lower turn tables while rotating and revolving the carrier, supplying a polishing agent, and measuring a thickness of the wafer;

performing a second polishing step of carrying out the double-side polishing process at a low polishing rate,

dividing a straight line extending from one outermost circumference of the polished wafer through a center of the polished wafer to another outermost circumference into prescribed sections, and optically measuring a cross-sectional shape of the divided sections;

applying a weight predetermined for each divided section to the measured cross-sectional shape to quantify flatness of each section; and

determining polishing conditions of the first and second polishing steps in a subsequent polishing cycle on a basis of the quantified flatness, wherein

a beam diameter of a measurement apparatus used to measure the cross-sectional shape of outermost sections is smaller than that used to measure the cross-sectional shape of the other section.

2. The double-side polishing method according to claim 1, wherein the step of determining polishing conditions of the first and second polishing steps includes adjusting at least one of a polishing load, a rotational speed and a revolution speed of the carrier, and a rotational speed of the upper and lower turn tables such that the thickness of the wafer subjected to the first and second polishing steps becomes a target thicknesses.

3. The double-side polishing method according to claim 1, wherein the beam diameter of the measurement apparatus used to measure the cross-sectional shape of the outermost sections is 1 mm or less.

4. The double-side polishing method according to claim 2, wherein the beam diameter of the measurement apparatus used to measure the cross-sectional shape of the outermost sections is 1 mm or less.

5. The double-side polishing method according to claim 1, wherein the cross-sectional shape is measured by optical reflection interferometry with an infrared laser.

6. The double-side polishing method according to claim 2, wherein the cross-sectional shape is measured by optical reflection interferometry with an infrared laser.

7. The double-side polishing method according to claim 3, wherein the cross-sectional shape is measured by optical reflection interferometry with an infrared laser.

8. The double-side polishing method according to claim 4, wherein the cross-sectional shape is measured by optical reflection interferometry with an infrared laser.

9. The double-side polishing method according to claim 1, wherein

the step of measuring the cross-sectional shape includes:

dividing the line such that the prescribed sections are symmetrical about the center of the wafer;

calculating a difference Δ

A in thickness of the wafer between at both ends of each section;

comparing the difference Δ

A of each section with that of the corresponding symmetrical section about the center of the wafer and determining that the difference of the corresponding sections is a larger value of absolute values of the compared differences, and

the step of quantifying the flatness includes;

quantifying flatness β

of an outer circumference of the wafer from the difference Δ

A of the outermost sections;

quantifying flatness α

of the entire wafer except for the outer circumference by applying each weight to the difference Δ

A of the corresponding section such that, as the section is closer to the center of the wafer, the weight is larger, and adding up the difference Δ

A of the sections other than the outermost sections.

10. The double-side polishing method according to claim 2, wherein

the step of measuring the cross-sectional shape includes:

dividing the line such that the prescribed sections are symmetrical about the center of the wafer;

calculating a difference Δ

A in thickness of the wafer between at both ends of each section;

comparing the difference Δ

A of each section with that of the corresponding symmetrical section about the center of the wafer and determining that the difference of the corresponding sections is a larger value of absolute values of the compared differences, and

the step of quantifying the flatness includes;

quantifying flatness β

of an outer circumference of the wafer from the difference Δ

A of the outermost sections;

quantifying flatness α

of the entire wafer except for the outer circumference by applying each weight to the difference Δ

A of the corresponding section such that, as the section is closer to the center of the wafer, the weight is larger, and adding up the difference Δ

A of the sections other than the outermost sections.

11. The double-side polishing method according to claim 3, wherein

the step of measuring the cross-sectional shape includes:

dividing the line such that the prescribed sections are symmetrical about the center of the wafer;

calculating a difference Δ

A in thickness of the wafer between at both ends of each section;

comparing the difference Δ

A of each section with that of the corresponding symmetrical section about the center of the wafer and determining that the difference of the corresponding sections is a larger value of absolute values of the compared differences, and

the step of quantifying the flatness includes;

quantifying flatness β

of an outer circumference of the wafer from the difference Δ

A of the outermost sections;

quantifying flatness α

of the entire wafer except for the outer circumference by applying each weight to the difference Δ

A of the corresponding section such that, as the section is closer to the center of the wafer, the weight is larger, and adding up the difference Δ

A of the sections other than the outermost sections.

12. The double-side polishing method according to claim 4, wherein

the step of measuring the cross-sectional shape includes:

dividing the line such that the prescribed sections are symmetrical about the center of the wafer;

calculating a difference Δ

A in thickness of the wafer between at both ends of each section;

comparing the difference Δ

A of each section with that of the corresponding symmetrical section about the center of the wafer and determining that the difference of the corresponding sections is a larger value of absolute values of the compared differences, and

the step of quantifying the flatness includes;

quantifying flatness β

of an outer circumference of the wafer from the difference Δ

A of the outermost sections;

quantifying flatness α

of the entire wafer except for the outer circumference by applying each weight to the difference Δ

A of the corresponding section such that, as the section is closer to the center of the wafer, the weight is larger, and adding up the difference Δ

A of the sections other than the outermost sections.

13. The double-side polishing method according to claim 5, wherein

the step of measuring the cross-sectional shape includes:

dividing the line such that the prescribed sections are symmetrical about the center of the wafer;

calculating a difference Δ

A in thickness of the wafer between at both ends of each section;

comparing the difference Δ

A of each section with that of the corresponding symmetrical section about the center of the wafer and determining that the difference of the corresponding sections is a larger value of absolute values of the compared differences, and

the step of quantifying the flatness includes;

quantifying flatness β

of an outer circumference of the wafer from the difference Δ

A of the outermost sections;

quantifying flatness α

of the entire wafer except for the outer circumference by applying each weight to the difference Δ

A of the corresponding section such that, as the section is closer to the center of the wafer, the weight is larger, and adding up the difference Δ

A of the sections other than the outermost sections.

14. The double-side polishing method according to claim 6, wherein

the step of measuring the cross-sectional shape includes:

dividing the line such that the prescribed sections are symmetrical about the center of the wafer;

calculating a difference Δ

A in thickness of the wafer between at both ends of each section;

comparing the difference Δ

A of each section with that of the corresponding symmetrical section about the center of the wafer and determining that the difference of the corresponding sections is a larger value of absolute values of the compared differences, and

the step of quantifying the flatness includes;

quantifying flatness β

of an outer circumference of the wafer from the difference Δ

A of the outermost sections;

quantifying flatness α

of the entire wafer except for the outer circumference by applying each weight to the difference Δ

A of the corresponding section such that, as the section is closer to the center of the wafer, the weight is larger, and adding up the difference Δ

A of the sections other than the outermost sections.

15. The double-side polishing method according to claim 7, wherein

the step of measuring the cross-sectional shape includes:

dividing the line such that the prescribed sections are symmetrical about the center of the wafer;

calculating a difference Δ

A in thickness of the wafer between at both ends of each section;

comparing the difference Δ

A of each section with that of the corresponding symmetrical section about the center of the wafer and determining that the difference of the corresponding sections is a larger value of absolute values of the compared differences, and

the step of quantifying the flatness includes;

quantifying flatness β

of an outer circumference of the wafer from the difference Δ

A of the outermost sections;

quantifying flatness α

of the entire wafer except for the outer circumference by applying each weight to the difference Δ

A of the corresponding section such that, as the section is closer to the center of the wafer, the weight is larger, and adding up the difference Δ

A of the sections other than the outermost sections.

16. The double-side polishing method according to claim 8, wherein

the step of measuring the cross-sectional shape includes:

dividing the line such that the prescribed sections are symmetrical about the center of the wafer;

calculating a difference Δ

A in thickness of the wafer between at both ends of each section;

comparing the difference Δ

A of each section with that of the corresponding symmetrical section about the center of the wafer and determining that the difference of the corresponding sections is a larger value of absolute values of the compared differences, and

the step of quantifying the flatness includes;

quantifying flatness β

of an outer circumference of the wafer from the difference Δ

A of the outermost sections;

quantifying flatness α

of the entire wafer except for the outer circumference by applying each weight to the difference Δ

A of the corresponding section such that, as the section is closer to the center of the wafer, the weight is larger, and adding up the difference Δ

A of the sections other than the outermost sections.

17. The double-side polishing method according to claim 9, wherein

the flatness α

of the entire wafer is quantified in such a manner that the flatness α

of the section closest to the center of the wafer is converted to 0 if the difference Δ

A is 0, 1 or 2 if the difference Δ

A is positive, −

1 or −

2 if the difference Δ

A is negative;

the flatness α

of the other section is converted to 0 if the difference Δ

A is 0, 0.5 if the difference Δ

A is positive, −

0.5 if the difference Δ

A is negative; and

the difference Δ

A of each section is then added up,

the flatness β

of the outer circumference of the wafer is quantified in such a manner that the flatness β

is 0 if the difference Δ

A is 0, 1 if the difference Δ

A is positive, −

1 if the difference Δ

A is negative, and

the step of determining polishing conditions of the first and second polishing steps includes determining the target thickness of the wafer to be polished in the first polishing step to be performed in the subsequent polishing cycle by adding β

×

T to the target thickness in a current polishing cycle, and determining the target thickness of the wafer to be polished in the second polishing step to be performed in the subsequent polishing cycle by subtracting α

×

T from the target thickness in the current polishing cycle, where T is a difference between the maximum thickness and the minimum thickness of the wafer.

18. The double-side polishing method according to claim 16, wherein

the flatness α

of the entire wafer is quantified in such a manner that the flatness α

of the section closest to the center of the wafer is converted to 0 if the difference Δ

A is 0, 1 or 2 if the difference Δ

A is positive, −

1 or −

2 if the difference Δ

A is negative;

the flatness α

of the other section is converted to 0 if the difference Δ

A is 0, 0.5 if the difference Δ

A is positive, −

0.5 if the difference Δ

A is negative; and

the difference Δ

A of each section is then added up,

the flatness β

of the outer circumference of the wafer is quantified in such a manner that the flatness β

is 0 if the difference Δ

A is 0, 1 if the difference Δ

A is positive, −

1 if the difference Δ

A is negative, and

the step of determining polishing conditions of the first and second polishing steps includes determining the target thickness of the wafer to be polished in the first polishing step to be performed in the subsequent polishing cycle by adding β

×

T to the target thickness in a current polishing cycle, and determining the target thickness of the wafer to be polished in the second polishing step to be performed in the subsequent polishing cycle by subtracting α

×

T from the target thickness in the current polishing cycle, where T is a difference between the maximum thickness and the minimum thickness of the wafer.

19. The double-side polishing method according to claim 1, further comprising:

taking the wafer out of the carrier after the second polishing step, and then

blowing air to a surface of the wafer taken out of the carrier before the step of measuring the cross-sectional shape.

20. The double-side polishing method according to claim 18, further comprising:

taking the wafer out of the carrier after the second polishing step, and then

blowing air to a surface of the wafer taken out of the carrier before the step of measuring the cross-sectional shape.