Memory driving circuit

• US 9,865,347 B2
• Filed: 04/14/2016
• Issued: 01/09/2018
• Est. Priority Date: 09/16/2015
• Status: Active Grant

• Current Assignee: Alto Memory Technology Corporation, Jiangsu Advanced Memory Technology Co., Ltd.
• Original Assignee: Alto Memory Technology Corporation, Jiangsu Advanced Memory Technology Co., Ltd.
• Inventors: Jien, Fan-Yi, Chang, Jia-Hwang, Huang, Sheng-Tsai, Wu, Jui-Jen
• Primary Examiner(s): Hoang, Huan
• Assistant Examiner(s): Techane, Muna A
• Application Number:
  US15/098,316
• Publication Number:
  US 20170076796A1
• Time in Patent Office: 635 Days
• Field of Search: 36518902
• CPC Class Codes: G11C 11/1655 Bit-line or column circuits
• CPC Class Codes: G11C 11/1657 Word-line or row circuits
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 13/0026 Bit-line or column circuits
• CPC Class Codes: G11C 13/0028 Word-line or row circuits
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 2013/0078 Write using current through the cell
• CPC Class Codes: G11C 29/021 in voltage or current generators
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: G11C 5/147 Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops G11C5/141 takes precedence

Abstract

A memory driving circuit is disclosed herein. The memory driving circuit includes a programmable current source, a reference voltage generation unit and a voltage comparator unit, The programmable current source generates a second current according to a first current. The second current flows into a memory cell, and produces a device voltage at the input of the memory cell. The reference voltage generation unit generates a crystal voltage. The voltage comparator unit compares the device voltage with the crystal voltage and sends out a control signal to control the programmable current source. The first current and the second current are adjusted by the control signal so that the shape of the current pulse of SET operation to the memory cell is well controlled.

Claims

1. A memory driving circuit, comprising:

a programmable current source, configured to generate a first current and a second current, wherein the second current drives a memory cell and produces a device voltage at a current input terminal of the memory cell, wherein the second current is proportional to the first current;

a reference voltage generation unit comprising a reference voltage terminal and configured to output a crystal voltage; and

a voltage comparator unit, comprising a first voltage input terminal, a second voltage input terminal, and a comparison output terminal, wherein the reference voltage terminal is connected to the first voltage input terminal, the current input terminal of the memory cell is connected to the second voltage input terminal, and the comparison output terminal is directly connected to the programmable current source;

wherein the voltage comparator unit compares the device voltage with the crystal voltage and sends out a first control signal, via the comparison output terminal, to control the programmable current source in order to adjust the magnitude of the first current and the second current.

2. The memory driving circuit of claim 1, wherein the comparison output terminal is directly connected to the reference voltage generation unit so that the first control signal controls the reference voltage generation unit to adjust the magnitude of the crystal voltage.

3. The memory driving circuit of claim 1, wherein the voltage comparator unit comprises:

an operational amplifier comprising a first terminal, a second terminal, and an amplifier output terminal, wherein the first terminal is connected to the first voltage input terminal, and the second terminal is connected to the second voltage input terminal;

a d-type flip flop unit comprising a data input terminal, a data output terminal, and a clock input terminal, wherein the amplifier output terminal is electrically connected to the data input terminal, and the operational amplifier compares the crystal voltage with the device voltage, and, via the amplifier output terminal, outputs a second control signal to the data input terminal, wherein the d-type flip flop unit samples, at each clock cycle, the voltage level of the second control signal, converts the voltage level and outputs a logic value to the data output terminal; and

a logic circuit unit comprising a logic input terminal and a logic output terminal, wherein the data output terminal is electrically connected to the logic input terminal, the logic output terminal is electrically connected to the comparison output terminal, and the logic circuit unit operates the logic value and sends out the first control signal to the comparison output terminal.

4. The memory driving circuit of claim 3, wherein the comparison output terminal is directly connected to the reference voltage generation unit so that the first control signal controls the reference voltage generation unit to adjust the magnitude of the crystal voltage.

5. The memory driving circuit of claim 4, wherein the reference voltage generation unit comprises a register and a multiplexer, configured to store the first control signal obtained in the clock cycle and adjust the value of the crystal voltage.

6. The memory driving circuit of claim 3, wherein the d-type flip flop unit comprises a plurality of d-type flip flops connected in series and sharing a same clock.

7. The memory driving circuit of claim 3, wherein the programmable current source comprises a register and a programmable reference current unit, wherein the register stores the first control signal obtained in the clock cycle and configures the current magnitude of the programmable reference current unit to generate the first current.

8. The memory driving circuit of claim 1, wherein the second current being proportional to the first current indicates the magnitude of the second current is N times or 1/N times of the magnitude of the first current, wherein N is an integer.

9. The memory driving circuit of claim 1, wherein a power source of the reference voltage generation unit is a constant voltage source.

10. The memory driving circuit of claim 1, wherein a power source of the reference voltage generation unit is a constant current source.