Horizontal gate all around and FinFET device isolation
First Claim
Patent Images
1. A device structure, comprising:
- a substrate;
a channel structure formed on the substrate, the channel structure having one or more silicon material layers, one or more silicon germanium material layers comprising between about 20% and about 40% germanium, and a buried oxide layer, wherein the silicon material layers, the silicon germanium material layers, and the buried oxide layer are disposed in a stacked arrangement.
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Abstract
Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.
37 Citations
14 Claims
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1. A device structure, comprising:
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a substrate; a channel structure formed on the substrate, the channel structure having one or more silicon material layers, one or more silicon germanium material layers comprising between about 20% and about 40% germanium, and a buried oxide layer, wherein the silicon material layers, the silicon germanium material layers, and the buried oxide layer are disposed in a stacked arrangement. - View Dependent Claims (2, 3)
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4. A device structure, comprising:
a channel structure having one or more silicon material layers, one or more silicon germanium material layers comprising between about 20% and about 40% germanium, and a buried oxide layer, wherein the silicon material layers, the silicon germanium material layers, and the buried oxide layer are disposed in a stacked arrangement. - View Dependent Claims (5, 6, 7, 8)
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9. A device structure, comprising:
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a substrate; a channel structure formed on the substrate, the channel structure having one or more silicon material layers, one or more silicon germanium material layers comprising between about 20% and about 40% germanium, and a buried oxide layer, wherein the silicon material layers, the silicon germanium material layers, and the buried oxide layer are disposed in a stacked arrangement; source/drain regions formed on the substrate; and a metal gate structure formed over the channel structure. - View Dependent Claims (10, 11)
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12. A device structure, comprising:
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a substrate; a channel structure having a buried oxide layer disposed on and in contact with the substrate and a silicon layer or silicon germanium layer comprising between about 20% and about 40% germanium disposed on the buried oxide layer; source/drain regions formed on the substrate; and a metal gate structure formed over the silicon layer or silicon germanium layer. - View Dependent Claims (13, 14)
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Specification