Thin-film transistor and method for forming the same

  • US 9,865,745 B2
  • Filed: 02/01/2016
  • Issued: 01/09/2018
  • Est. Priority Date: 07/03/2015
  • Status: Active Grant
First Claim
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1. A thin-film transistor, comprising:

  • a substrate;

    a gate electrode disposed on a top surface of the substrate;

    a gate insulator layer disposed on the top surface of the substrate and covering on the gate electrode;

    a semiconductor oxide layer disposed on the top surface of the gate insulator layer and comprising a semiconductor channel, and a thickness of the semiconductor oxide layer not being larger than 20 nanometers(nm);

    a protection layer disposed on a top surface of the semiconductor oxide layer and corresponding to the semiconductor channel;

    an organic dielectric layer disposed over both the protection layer and the semiconductor oxide layer, the organic dielectric layer being in contact with a top surface of the protection layer, the organic dielectric layer also being in contact with the top surface of the semiconductor oxide layer on lateral sides of the semiconductor oxide layer, which are not covered by the protection layer, and comprising a plurality of through holes; and

    a source electrode and a drain electrode, disposed on a top surface of the organic dielectric layer and contacting the semiconductor oxide layer through the plurality of through holes.

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