Method for manufacturing thin film transistor and related active layer for thin film transistor, thin film transistor, array substrate, and display apparatus

  • US 9,887,213 B2
  • Filed: 08/14/2015
  • Issued: 02/06/2018
  • Est. Priority Date: 12/23/2014
  • Status: Active Grant
First Claim
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1. A method for forming an active layer with a pattern, comprising:

  • forming an amorphous silicon layer;

    forming a patterned function layer on the amorphous silicon layer, wherein the patterned function layer has a same pattern as the active layer; and

    performing, after forming the patterned function layer, a crystallizing process for converting the amorphous silicon layer to a poly-silicon layer, wherein the poly-silicon layer has first portions covered by the patterned function layer and second portions not covered by the patterned function layer, and grain sizes of the poly-silicon in the first portions are larger than grain sizes of the poly-silicon in the second portions.

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