Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

• US 9,890,038 B2
• Filed: 02/22/2016
• Issued: 02/13/2018
• Est. Priority Date: 03/15/2013
• Status: Active Grant

• Current Assignee: Versana Micro Inc.
• Original Assignee: Versana Micro Inc.
• Inventors: Gogoi, Bishnu Prasanna
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US15/049,339
• Publication Number:
  US 20160167953A1
• Time in Patent Office: 722 Days
• CPC Class Codes: B81B 2201/0207 Bolometers
• CPC Class Codes: B81B 2201/0214 Biosensors; Chemical sensors
• CPC Class Codes: B81B 2201/0228 Inertial sensors
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2201/0278 Temperature sensors
• CPC Class Codes: B81B 2207/012 the micromechanical device and the control or processing electronics being separate parts in the same package
• CPC Class Codes: B81B 2207/05 Arrays
• CPC Class Codes: B81B 2207/09 Packages
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: H01L 27/14 including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation radiation-sensitive components structurally associated with one or more electric light sources only H01L31/14; couplings of light guides with optoelectronic elements G02B6/42
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H05K 7/02 Arrangements of circuit components or wiring on supporting structure
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
• CPC Class Codes: H10N 30/302 Sensors
• CPC Class Codes: H10N 30/308 Membrane type
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

Claims

1. A monolithically integrated multi-sensor (MIMs) comprising:

a first integrated circuit comprising;

an inertial sensor; and

a first MEMs sensor wherein the first MEMs sensor is configured to measure a different parameter than the inertial sensor.

2. The MIMS of claim 1 further including a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

3. The MIMS of claim 1 further including a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

4. The MIMS of claim 1 wherein the first MEMs sensor is exposed to an external environment.

5. The MIMS of claim 1 wherein the first MEMs sensor is sealed from the external environment.

6. The MIMS of claim 1 wherein at least one layer seals the inertial sensor and the first MEMs sensor.

7. The MIMS of claim 1 wherein a volume of a cavity of the first MEMs sensor is fixed.

8. The MIMS of claim 1 wherein a volume of a cavity of the first MEMs sensor is configured to vary according to stimulus.

9. The MIMS of claim 1 wherein the inertial sensor and the first MEMs sensor share at least one layer in common and wherein the at least one layer seals the inertial sensor and wherein the at least one layer includes an opening exposing the first MEMs sensor to an external environment.

10. The MIMS of claim 1 wherein the first MEMs sensor includes a moving plate.

11. The MIMS of claim 1 wherein the first MEMs sensor includes a structure configured to flex.

12. The MIMS of claim 1 wherein the first MEMs sensor is sealed at a different pressure than the inertial sensor.

13. The MIMS of claim 1 wherein the first MEMs sensor and the inertial sensor is sealed by one or more deposited layers.

14. The MIMS of claim 1 wherein the MIMs includes at least one of the one or more deposited layers comprise silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, amorphous silicon, silicon nitride, silicon oxynitride, silicon carbide, silicon germanium, germanium, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

15. The MIMs of claim 1 wherein the first integrated circuit comprises, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or a biological sensor.

16. The MIMS of claim 1 wherein the first integrated circuit is formed on one or more substrates.

17. The MIMS of claim 1 wherein the first integrated circuit is formed on a single substrate.

18. The MIMS of claim 1 further including a second MEMs sensor.

19. The MIMS of claim 1 further including a third MEMs sensor.

20. The MIMS of claim 1 wherein the first integrated circuit further includes electronic circuitry.

21. The MIMS of claim 1 further including a heater.

22. The MIMS of claim 1 wherein the first MEMs sensor is a second inertial sensor configured to a different parameter than the inertial sensor.

23. The MIMS of claim 1 wherein the first MEMs sensor is a pressure sensor.

24. The MIMS of claim of claim 1 wherein the first MEMs sensor is a transducer.

25. The MIMS of claim 13 wherein the inertial sensor or the first MEMs sensor is sealed by depositing a layer using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating.

26. A monolithically integrated multi-sensor (MIMs) comprising:

a first integrated circuit comprising;

an inertial sensor; and

a first MEMs sensor wherein the first MEMs sensor is configured to measure a different parameter than the inertial sensor; and

a second MEMs sensor wherein the second MEMs sensor is configured to measure a different parameter than the inertial sensor and the first MEMs sensor.

27. The MIMS of claim 26 further including a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

28. The MIMS of claim 26 a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

29. The MIMS of claim 26 wherein at least one of the first or second MEMs sensors is exposed to an external environment.

30. The MIMS of claim 26 wherein at least one layer is shared in common with the inertial sensor, the first MEMs sensor, and the second MEMs sensor and wherein at least a portion of the at least one layer is etched.

31. The MIMS of claim 26 wherein at least one of the first or second MEMs sensors is sealed from an external environment.

32. The MIMS of claim 26 wherein one of the first or second MEMs sensors has a cavity with a fixed volume.

33. The MIMS of claim 26 wherein one of the first or second MEMs sensors has a cavity configured to vary according to a stimulus.

34. The MIMS of claim 26 wherein one of the first or second MEMs sensors has a moving plate.

35. The MIMS of claim 26 wherein one of the first or second MEMs sensors includes a structure that flexes.

36. The MIMS of claim 26 wherein the inertial sensors has at least one layer in common with the first MEMs sensor and wherein the at least one layer is an electrode of the first MEMs sensor.

37. The MIMS of claim 26 wherein two of the inertial sensor, the first MEMs sensor, or the second MEMs sensor are sealed from an external environment at a different pressure.

38. The MIMS of claim 26 wherein at least one of the inertial sensor, the first MEMs sensor, or the second MEMs sensor is sealed by one or more deposited layers.

39. The MIMS of claim 26 wherein the MIMs comprises at least one of the one or more deposited layers comprise silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, amorphous silicon, silicon nitride, silicon oxynitride, silicon carbide, silicon germanium, germanium, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.

40. The MIMS of claim 26 wherein one of the inertial sensor, the first MEMs sensor, or the second MEMs sensor is sealed by depositing a layer using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating.

41. The MIMs of claim 26 wherein the first integrated circuit comprises at least three of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or a biological sensor.

42. The MIMS of claim 26 wherein the first integrated circuit is formed on one or more substrates.

43. The MIMS of claim 26 wherein the first integrated circuit further includes electronic circuitry.

44. The MIMS of claim 26 wherein the inertial sensor is an accelerometer.

45. The MIMS of claim 26 wherein the inertial sensor is a gyroscope.

46. The MIMS of claim 26 wherein the inertial sensor is sealed from an external environment and wherein one of the first or second MEMs sensor is exposed to the external environment.

47. The MIMS of claim 26 wherein the inertial sensor is an accelerometer and wherein the second MEMs sensor is a gyroscope.

74. The MIMS of claim 26 wherein the first integrated circuit is formed on a single substrate.

75. The MIMS of claim 26 further including a fourth MEMs sensor.

48. A monolithically integrated multi-sensor (MIMs) comprising:

a first integrated circuit comprising;

an inertial sensor; and

at least two MEMs sensors wherein the at least two MEMs sensor measure different parameters, wherein the at least two MEMs sensors measure a different parameter than the inertial sensor, and wherein the inertial sensor and the at least two MEMs sensors share a deposited layer in common.

49. The MIMS of claim 48 further including a second integrated circuit having at least one sensor wherein the second integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

50. The MIMS of claim 48 a third integrated circuit having control circuitry wherein the first integrated circuit is coupled to the first integrated circuit via conductive bumps or wirebonds.

51. The MIMS of claim 48 wherein one of the at least two MEMs sensors is exposed to an external environment.

52. The MIMS of claim 48 wherein at least one layer is shared in common with at least two of the inertial sensor or the at least two MEMs sensors and wherein at least a portion of the at least one layer is etched.

53. The MIMS of claim 48 wherein at least one layer seals at least two of the inertial sensor or the at least two MEMs sensors.

54. The MIMS of claim 48 wherein at least one of the inertial sensor or at least two MEMs sensors has a cavity with a fixed volume and wherein at least one of the inertial sensor or the at least two MEMs sensors has a cavity having a volume configured to vary according to stimulus.

55. The MIMS of claim 48 wherein the inertial sensor and the at least two MEMs sensors have at least one layer in common, wherein the at least one layer seals the inertial sensor, and wherein the at least one layer includes an opening exposing at least one of the at least two MEMs sensors to an external environment.

56. The MIMS of claim 48 wherein the inertial sensor and the at least two MEMs sensors have at least one layer in common, wherein the at least one layer forms a cap on the inertial sensor or at least one of the at least two MEMs sensors, and wherein the at least one layer forms a moving plate on at least one of the inertial sensor or at least one of the at least two MEMs sensors.

57. The MIMS of claim 48 wherein the inertial sensor and the at least two MEMS sensors have at least one layer in common, wherein the at least one layer is configured to flex in the inertial sensor or one of the at least two MEMs sensors, and wherein the at least one layer is non-flexing in the inertial sensor or one of the at least two MEMs sensors.

58. The MIMS of claim 48 wherein the inertial sensor and the at least two MEMs sensors have at least one layer in common and wherein the at least one layer is an electrode in one of the at least two MEMs sensors.

59. The MIMS of claim 48 wherein two of the inertial sensor or the at least two MEMs sensors are sealed from an external environment at a different pressure.

60. The MIMS of claim 48 wherein at least at least one of the at least two MEMs sensor is sealed by one or more deposited layers.

61. The MIMS of claim 48 wherein the inertial sensor is sealed by depositing a layer using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating.

62. The MIMs of claim 48 wherein the at least two sensors comprises at least two of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or a biological sensor.

63. The MIMS of claim 48 wherein the first integrated circuit is formed on one or more substrates.

64. The MIMS of claim 48 wherein the first integrated circuit is formed on a single substrate.

65. The MIMS of claim 48 wherein the inertial sensor is an accelerometer.

66. The MIMS of claim 48 wherein the inertial sensor is a gyroscope.

67. The MIMs of claim 48 wherein one of the at least two sensors is a biological sensor.

68. The MIMS of claim 48 wherein one of the at least two sensors is a chemical, gas, or liquid sensor.

69. The MIMS of claim 48 wherein the first integrated circuit further includes electronic circuitry.

70. The MIMS of claim 48 wherein one of the at least two sensors is a direct sensor.

71. The MIMS of claim 48 wherein one of the at least two sensors is an indirect sensor.

72. The MIMS of claim 48 wherein one of the at least two sensors is a light sensor.

73. The MIMS of claim 48 wherein one of the at least two sensors is pressure sensor.

76. The MIMS of claim 58 wherein at least one of the one or more deposited layers on the MIMs comprise silicon oxide, PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG (Boron Phosphosilicate Glass), PECVD Oxide, TEOS (tetraethylorthosilicate), plasma assisted oxide, laser assisted CVD oxide, sputtered oxide, amorphous silicon, silicon nitride, silicon oxynitride, silicon carbide, silicon germanium, germanium, diamond, polymer, photoresist, or metals such as aluminum, gold, copper, silver, tungsten, nickel, titanium, chrome, platinum, or iridium.