Semiconductor device

• US 9,892,995 B2
• Filed: 06/24/2015
• Issued: 02/13/2018
• Est. Priority Date: 05/25/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: LAPIS Semiconductor Co., Ltd. (ROHM Co., Ltd.)
• Inventors: Nomura, Akihiko
• Primary Examiner(s): Luu, Chuong A
• Application Number:
  US14/748,537
• Publication Number:
  US 20150348875A1
• Time in Patent Office: 965 Days
• Field of Search: 257774, 257760, 257750, 257758
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device includes a semiconductor substrate. The semiconductor substrate has a first main surface and a second main surface opposite to the first main surface, and includes a first conductive layer formed on the second main surface. A through hole penetrates through the semiconductor substrate from the first main surface to the second main surface, so that the first conductive layer formed on the second main surface is exposed at a bottom portion of the through hole. A seed layer is formed on a side surface of the through hole from the bottom portion of the through hole to the first main surface; a second conductive layer is formed on the seed layer; and a third conductive layer is selectively formed on the second conductive layer.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface, said semiconductor substrate having a through hole penetrating through the semiconductor substrate from the second main surface to the first main surface in a thickness direction of the semiconductor substrate;

a first conductive layer covering a part of the first main surface so that the first conductive layer constitutes a bottom of the through hole; and

a second conductive layer covering a part of the second main surface, said second conductive layer being formed on a side surface of the through hole and the bottom of the through hole,

wherein said second conductive layer includes a connecting portion connected to the first conductive layer and a protruding portion at the bottom of the through hole, and

said protruding portion is embedded in the first conductive layer and protrudes outwardly from an outer end portion of the connecting portion in a direction in parallel to the first main surface.

2. The semiconductor device according to claim 1, wherein said first conductive layer has a recess portion facing the first main surface, and

said protruding portion is situated in the recess portion.

3. The semiconductor device according to claim 2, wherein said protruding portion directly contacts with the first conductive layer.

4. The semiconductor device according to claim 1, further comprising a third conductive layer between the second conductive layer and the side surface of the through hole.

5. The semiconductor device according to claim 1, further comprising a third conductive layer and an insulation layer between the second conductive layer and the side surface of the through hole.

6. The semiconductor device according to claim 1, further comprising a protective layer that covers the second conductive layer and the second main surface.

7. The semiconductor device according to claim 1, wherein said protruding portion has a thickness decreasing outwardly from a center of the through hole, and

said protruding portion includes a sharp end portion at a furthest location from the center of the through hole.

8. The semiconductor device according to claim 1, wherein said second conductive layer on the side surface of the through hole has an uneven thickness.

9. A semiconductor device comprising:

a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface, said semiconductor substrate including a first conductive layer formed on the first main surface, said semiconductor substrate having a through hole penetrating through the semiconductor substrate from the second main surface to the first main surface in a thickness direction of the semiconductor substrate so that the through hole exposes the first conductive layer; and

a second conductive layer formed on the second main surface and a side surface of the through hole,

wherein said second conductive layer includes a connecting portion connected to the first conductive layer and a protruding portion at a bottom of the through hole, and

said protruding portion is embedded in the first conductive layer and protrudes outwardly from an outer end portion of the connecting portion in a direction in parallel to the first main surface.