LED chip having ESD protection
First Claim
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1. A flip-chip type light emitting diode chip comprising:
- a substrate;
a light emitting diode part aligned on the substrate;
a reverse-parallel diode part aligned on the substrate and connected to the light emitting diode part;
an insulation layer covering the light emitting diode part and the reverse-parallel diode part;
a first electrode pad aligned on the light emitting diode part; and
a second electrode pad aligned over the light emitting diode part and the reverse-parallel diode part,wherein each of the light emitting diode part and the reverse-parallel diode part comprises;
a first conductive type nitride-based semiconductor layer;
a second conductive type nitride-based semiconductor layer; and
an active layer placed between the first conductive type nitride-based semiconductor layer and the second conductive type nitride-based semiconductor layer, andwherein the first electrode pad is electrically connected to the first conductive type semiconductor layer of the light emitting diode part and the second conductive type semiconductor layer of the reverse-parallel diode part, andwherein the second electrode pad electrically connected to the first conductive type semiconductor layer of the reverse-parallel diode part and the second conductive type semiconductor layer of the light emitting diode part through the insulation layer.
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Abstract
Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.
2 Citations
15 Claims
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1. A flip-chip type light emitting diode chip comprising:
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a substrate; a light emitting diode part aligned on the substrate;
a reverse-parallel diode part aligned on the substrate and connected to the light emitting diode part;an insulation layer covering the light emitting diode part and the reverse-parallel diode part; a first electrode pad aligned on the light emitting diode part; and a second electrode pad aligned over the light emitting diode part and the reverse-parallel diode part, wherein each of the light emitting diode part and the reverse-parallel diode part comprises; a first conductive type nitride-based semiconductor layer; a second conductive type nitride-based semiconductor layer; and an active layer placed between the first conductive type nitride-based semiconductor layer and the second conductive type nitride-based semiconductor layer, and wherein the first electrode pad is electrically connected to the first conductive type semiconductor layer of the light emitting diode part and the second conductive type semiconductor layer of the reverse-parallel diode part, and wherein the second electrode pad electrically connected to the first conductive type semiconductor layer of the reverse-parallel diode part and the second conductive type semiconductor layer of the light emitting diode part through the insulation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification