Method for manufacturing a solar cell with a surface-passivating dielectric double layer, and corresponding solar cell

  • US 9,893,215 B2
  • Filed: 11/06/2008
  • Issued: 02/13/2018
  • Est. Priority Date: 11/14/2007
  • Status: Active Grant
First Claim
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1. Method for manufacturing a silicon solar cell, including the following steps:

  • providing a silicon substrate;

    depositing a first dielectric layer having a thickness of less than 50 nm on a surface of the silicon substrate by means of atomic layer deposition, wherein the first dielectric layer comprises aluminium oxide; and

    depositing a second dielectric layer directly on a surface of the first dielectric layer, materials of the first dielectric layer and the second dielectric layer differing and hydrogen being embedded into the second dielectric layer.

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