Data storage method and phase change memory

  • US 9,899,084 B2
  • Filed: 01/23/2017
  • Issued: 02/20/2018
  • Est. Priority Date: 07/24/2014
  • Status: Active Grant
First Claim
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1. A data storage method applying to a phase change memory, comprising:

  • obtaining first to-be-stored data, wherein the first to-be-stored data are multi-bit data;

    generating a first erase pulse signal and a first write signal according to the first to-be-stored data, wherein the first write signal comprises at least two consecutive pulses, wherein the at least two consecutive pulses have a same amplitude, and wherein the amplitude of the at least two consecutive pulses is a value determined according to the first to-be-stored data and a number of pulses in the first write signal;

    applying the first erase pulse signal to a storage unit of the phase change memory to allow the storage unit to switch to a crystalline state; and

    applying the first write signal to the storage unit to allow the storage unit to switch to a first amorphous state corresponding to a first resistance value, wherein the first amorphous state represents the first to-be-stored data.

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