Thin-film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display apparatus

  • US 9,899,532 B2
  • Filed: 06/19/2015
  • Issued: 02/20/2018
  • Est. Priority Date: 01/28/2015
  • Status: Active Grant
First Claim
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1. A method for manufacturing a thin-film transistor (TFT), comprising:

  • forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate,in which forming of the metal oxide semiconductor active layer comprises;

    forming the metal oxide semiconductor active layer by electrochemical reaction, wherein the metal oxide semiconductor active layer is of a Cu2O semiconductor material, and wherein the metal oxide semiconductor active layer of the Cu2O semiconductor material is formed by the electrochemical reaction on a Cu metal film, wherein forming of the metal oxide semiconductor active layer further comprises;

    forming the Cu metal film on the substrate;

    forming a first pattern disposed in an active region by performing a single patterning process on the Cu metal film; and

    forming the first pattern into the Cu2O semiconductor material by the electrochemical reaction.

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