Array substrate and method for making same

  • US 9,905,697 B2
  • Filed: 10/19/2016
  • Issued: 02/27/2018
  • Est. Priority Date: 12/16/2015
  • Status: Active Grant
First Claim
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1. A TFT substrate comprising:

  • a substrate;

    a semiconductor layer formed on the substrate, the semiconductor layer having a top surface and a bottom surface opposite to and facing away from the top surface;

    a first conductive layer formed on the bottom surface of the semiconductor layer, the first conductive layer defining a gate electrode; and

    a second conductive layer formed on the top surface of the semiconductor layer opposite to the first conductive layer, the second conductive layer defining a source electrode and a drain electrode separated from the source electrode;

    wherein the second conductive layer comprises a first layer positioned on the semiconductor layer and a second layer positioned on the first layer;

    the first layer is made of metal oxide; and

    the second layer is made of aluminum or aluminum alloy;

    the first layer functions as an ohmic contact layer between the semiconductor layer and the second layer;

    wherein the second conductive layer further comprises a third layer positioned on the second layer, the third layer is made of metal oxide;

    wherein a groove is defined between the source electrode and the drain electrode;

    the groove passes through the first layer, the second layer, and the third layer; and

    wherein the size of the groove gradually decreases along a direction from the third layer to the first layer;

    wherein both the third layer and the first layer are made of metal oxides containing same elements;

    wherein both the third layer and the first layer are made of a same metal oxide containing zinc; and

    the third layer has an atomic percentage of zinc larger than that of the first layer.

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