Array substrate and method for making same
First Claim
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1. A TFT substrate comprising:
- a substrate;
a semiconductor layer formed on the substrate, the semiconductor layer having a top surface and a bottom surface opposite to and facing away from the top surface;
a first conductive layer formed on the bottom surface of the semiconductor layer, the first conductive layer defining a gate electrode; and
a second conductive layer formed on the top surface of the semiconductor layer opposite to the first conductive layer, the second conductive layer defining a source electrode and a drain electrode separated from the source electrode;
wherein the second conductive layer comprises a first layer positioned on the semiconductor layer and a second layer positioned on the first layer;
the first layer is made of metal oxide; and
the second layer is made of aluminum or aluminum alloy;
the first layer functions as an ohmic contact layer between the semiconductor layer and the second layer;
wherein the second conductive layer further comprises a third layer positioned on the second layer, the third layer is made of metal oxide;
wherein a groove is defined between the source electrode and the drain electrode;
the groove passes through the first layer, the second layer, and the third layer; and
wherein the size of the groove gradually decreases along a direction from the third layer to the first layer;
wherein both the third layer and the first layer are made of metal oxides containing same elements;
wherein both the third layer and the first layer are made of a same metal oxide containing zinc; and
the third layer has an atomic percentage of zinc larger than that of the first layer.
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Abstract
A high-performance TFT substrate for a flat panel display includes a substrate, a first conductive layer on the substrate, a semiconductor layer positioned on the first conductive layer, and a second conductive layer positioned on the semiconductor layer. The first conductive layer defines a gate electrode. The second conductive layer defines a source electrode and a drain electrode spaced apart from the source electrode. The second conductive layer includes a first layer on the semiconductor layer and a second layer positioned on the first layer. The first layer can be made of metal oxide. The second layer can be made of aluminum or aluminum alloy.
6 Citations
2 Claims
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1. A TFT substrate comprising:
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a substrate; a semiconductor layer formed on the substrate, the semiconductor layer having a top surface and a bottom surface opposite to and facing away from the top surface; a first conductive layer formed on the bottom surface of the semiconductor layer, the first conductive layer defining a gate electrode; and a second conductive layer formed on the top surface of the semiconductor layer opposite to the first conductive layer, the second conductive layer defining a source electrode and a drain electrode separated from the source electrode; wherein the second conductive layer comprises a first layer positioned on the semiconductor layer and a second layer positioned on the first layer;
the first layer is made of metal oxide; and
the second layer is made of aluminum or aluminum alloy;
the first layer functions as an ohmic contact layer between the semiconductor layer and the second layer;wherein the second conductive layer further comprises a third layer positioned on the second layer, the third layer is made of metal oxide; wherein a groove is defined between the source electrode and the drain electrode;
the groove passes through the first layer, the second layer, and the third layer; and
wherein the size of the groove gradually decreases along a direction from the third layer to the first layer;wherein both the third layer and the first layer are made of metal oxides containing same elements; wherein both the third layer and the first layer are made of a same metal oxide containing zinc; and
the third layer has an atomic percentage of zinc larger than that of the first layer.
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2. A method for making a TFT substrate comprising:
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forming a gate electrode on a substrate; forming a gate insulating layer on the substrate and covering the gate electrode; forming a semiconductor layer on the gate insulating layer; forming a first layer on the semiconductor layer, the first layer being made of metal oxide; forming a second layer on the first layer, the second layer being made of aluminum or aluminum alloy; forming a third layer on the second layer, the third layer being made of metal oxide; etching the first layer, the second layer, and the third layer to form a source electrode and a drain electrode spaced apart from the source electrode; wherein the first layer functions as an ohmic contact layer between the semiconductor layer and the second layer; wherein both the third layer and the first layer are made of a same metal oxide containing zinc; and
the third layer has an atomic percentage of zinc larger than that of the first layer.
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Specification