Bulk acoustic resonator comprising aluminum scandium nitride

• US 9,917,567 B2
• Filed: 09/02/2015
• Issued: 03/13/2018
• Est. Priority Date: 05/20/2011
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Bradley, Paul, Shirakawa, Alexandre, Bader, Stefan
• Primary Examiner(s): Summons, Barbara
• Application Number:
  US14/843,943
• Publication Number:
  US 20150381144A1
• Time in Patent Office: 923 Days
• Field of Search: 333187, 333189
• CPC Class Codes: H03H 3/02 for the manufacture of piezoelectric or electrostrictive resonators or networks H03H3/08 takes precedence
• CPC Class Codes: H03H 9/02015 Characteristics of piezoelectric layers, e.g. cutting angles
• CPC Class Codes: H03H 9/0211 of reflections
• CPC Class Codes: H03H 9/1014 the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
• CPC Class Codes: H03H 9/132 characterized by a particular shape
• CPC Class Codes: H03H 9/173 Air-gaps
• CPC Class Codes: H03H 9/568 consisting of a ladder configuration
• CPC Class Codes: H03H 9/605 consisting of a ladder configuration

Abstract

A ladder filter includes a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port. At least one of the series or shunt resonators include a bulk acoustic wave (BAW) resonator structure, which includes: a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 microns to approximately 1.5 microns; and a second electrode disposed over the piezoelectric layer. The BAW resonator structure has an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for an undoped aluminum nitride piezoelectric layer.

Claims

1. A bulk acoustic wave (BAW) resonator structure, comprising:

a first electrode disposed over a substrate;

an air cavity located in the substrate and below the first electrode;

a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 μ

m to approximately 1.5 μ

m; and

a second electrode disposed over the piezoelectric layer, wherein the BAW resonator structure has an electrical impedance, and an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for comprising an undoped aluminum nitride piezoelectric layer, and having the same electrical impedance.

2. The BAW resonator structure of claim 1, wherein the BAW resonator structure has a passband with a center frequency in a range of approximately 700 MHz to approximately 900 MHz.

3. The BAW resonator structure of claim 1, wherein the aluminum scandium nitride has a scandium concentration between approximately zero percent by number of atoms and 50 percent by number of atoms.

4. The BAW resonator structure of claim 1, wherein the aluminum scandium nitride has a scandium concentration of approximately 5 percent by number of atoms to approximately 10 percent by number of atoms.

5. A bulk acoustic wave (BAW) resonator structure, comprising:

a first electrode disposed over a substrate;

an air cavity located in the substrate and below the first electrode;

a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, wherein the BAW resonator structure has a passband with a center frequency between approximately 700 MHz and approximately 900 MHz; and

a second electrode disposed over the piezoelectric layer, wherein the BAW resonator structure has an electrical impedance, and an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for comprising an undoped aluminum nitride piezoelectric layer, and having the same electrical impedance.

6. The BAW resonator structure of claim 5, wherein the first and second electrodes each comprise tungsten.

7. The BAW resonator structure of claim 5, wherein the piezoelectric layer has a thickness in a range of approximately 1.0 μ

m to approximately 1.5 μ

m.

8. The BAW resonator structure of claim 5, wherein the aluminum scandium nitride has a scandium concentration of approximately 5 percent by number of atoms to approximately 10 percent by number of atoms.

9. The BAW resonator structure of claim 5, wherein the aluminum scandium nitride has a scandium concentration of approximately 0 percent by number of atoms to approximately 50 percent by number of atoms.

10. A ladder filter comprising a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port, at least one of the series resonators, or shunt resonators comprising a bulk acoustic wave (BAW) resonator structure, comprising:

a first electrode disposed over a substrate;

an air cavity located in the substrate and below the first electrode;

a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 microns to approximately 1.5 microns; and

a second electrode disposed over the piezoelectric layer, wherein the BAW resonator structure has an electrical impedance, and an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for an undoped aluminum nitride piezoelectric layer, and having the same electrical impedance.

11. The ladder filter of claim 10, wherein the aluminum scandium nitride has a scandium concentration between approximately 0 percent and approximately 50 percent by number of atoms.

12. The ladder filter of claim 10, wherein the aluminum scandium nitride has a scandium concentration of approximately 5 percent by number of atoms to approximately 10 percent by number of atoms.

13. A ladder filter comprising a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port, at least one of the series resonators, or shunt resonators comprising a bulk acoustic wave (BAW) resonator structure, comprising:

a first electrode disposed over a substrate;

an air cavity located in the substrate and below the first electrode;

a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 microns to approximately 1.5 microns; and

a second electrode disposed over the piezoelectric layer, wherein the ladder filter has a passband with a center frequency in a range of approximately 700 MHz to approximately 900 MHz.

14. The ladder filter of claim 13, wherein the aluminum scandium nitride has a scandium concentration between approximately 0 percent and approximately 50 percent by number of atoms.

15. The ladder filter of claim 13, wherein the aluminum scandium nitride has a scandium concentration of approximately 5 percent by number of atoms to approximately 10 percent by number of atoms.

16. The ladder filter of claim 13, wherein the aluminum scandium nitride has a scandium concentration of approximately 5 percent by number of atoms to approximately 10 percent by number of atoms.

17. The ladder filter of claim 13, wherein the first and second electrodes each comprise tungsten.