Semiconductor device and fabricating method thereof

  • US 9,947,766 B2
  • Filed: 07/10/2017
  • Issued: 04/17/2018
  • Est. Priority Date: 02/26/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    a source/drain region in the substrate;

    an etch stop layer over the source/drain region;

    an oxide layer over the etch stop layer;

    an interlayer dielectric layer over the oxide layer; and

    a contact plug electrically connected to the source/drain region through the interlayer dielectric layer, the oxide layer, and the etch stop layer.

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