Quantum dot light emitting diode, display apparatus and its manufacturing method

• US 9,947,886 B2
• Filed: 07/20/2016
• Issued: 04/17/2018
• Est. Priority Date: 01/20/2016
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Shu, Shi, He, Xiaolong, Xu, Wei, Xu, Chuanxiang, Qi, Yonglian
• Primary Examiner(s): Nguyen, Thanh T
• Application Number:
  US15/215,104
• Publication Number:
  US 20170207406A1
• Time in Patent Office: 636 Days
• CPC Class Codes: H10K 50/115 comprising active inorganic nanostructures, e.g. luminescent quantum dots
• CPC Class Codes: H10K 50/15 Hole transporting layers
• CPC Class Codes: H10K 50/16 Electron transporting layers
• CPC Class Codes: H10K 50/17 Carrier injection layers
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 71/15 characterised by the solvent used

Abstract

A quantum dot light emitting diode, a display apparatus, and a manufacturing method are provided. The manufacturing method includes forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, wherein the first functional layer is made from organic material, a material for the buffer layer includes a polar organic solvent, and forming the quantum dot layer includes forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using inkjet printing method, the non-polar organic solvent and the polar organic solvent are capable of dissolving each other; and removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.

Claims

1. A manufacturing method for a quantum dot light emitting diode, including forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, the first functional layer being formed with an organic material, wherein:

a material for the buffer layer includes a polar organic solvent;

forming the quantum dot layer includes;

forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using an inkjet printing method, wherein the non-polar organic solvent and the polar organic solvent are capable of dissolving each other, wherein the polar organic solvent of the buffer layer dissolves and annexes the non-polar organic solvent contacted therewith, so that the quantum dots are extracted; and

removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.

2. The manufacturing method according to claim 1, wherein a boiling point of the polar organic solvent and a boiling point of the non-polar organic solvent are both less than 200°

C.

3. The manufacturing method according to claim 2, wherein the polar organic solvent includes an alcohol or an ether.

4. The manufacturing method according to claim 2, wherein the non-polar organic solvent includes an alkane or an aromatic hydrocarbon.

5. The manufacturing method according to claim 2, wherein forming the first functional layer comprises:

forming a hole injection layer and a hole transportation layer sequentially above the first electrode using the inkjet printing method.

6. The manufacturing method according to claim 2, wherein forming the second functional layer comprises:

forming an electron transportation layer above the quantum dot layer using the inkjet printing method.

7. The manufacturing method according to claim 1, wherein forming the first functional layer includes:

forming a hole injection layer and a hole transportation layer sequentially above the first electrode using the inkjet printing method.

8. The manufacturing method according to claim 1, wherein forming the second functional layer includes:

forming an electron transportation layer above the quantum dot layer using the inkjet printing method.

9. A manufacturing method for a display apparatus, including forming a quantum dot light emitting diode on a base substrate at a position of at least one of a plurality of sub pixels, wherein the quantum dot light emitting diode is formed by the manufacturing method according to claim 1.

10. The manufacturing method according to claim 9, wherein the plurality of sub pixels are partitioned by a pixel defining layer therebetween.

11. The manufacturing method according to claim 9, wherein before forming the first electrode in the quantum dot light emitting diode, the method further comprises:

forming a thin film transistor at the position of the at least one of the plurality of sub pixels.

12. A display apparatus formed by the manufacturing method according to claim 9.

13. A quantum dot light emitting diode, formed by the manufacturing method according to claim 1.