RF and/or RF identification tag/device having an integrated interposer, and methods for making and using the same

• US 9,953,259 B2
• Filed: 10/03/2005
• Issued: 04/24/2018
• Est. Priority Date: 10/08/2004
• Status: Expired due to Fees

• Current Assignee: Ensurge Micropower ASA
• Original Assignee: Thin Film Electronics ASA
• Inventors: MacKenzie, J. Devin, Pavate, Vikram
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): FOX, BRANDON C
• Application Number:
  US11/243,460
• Publication Number:
  US 20070273515A1
• Time in Patent Office: 4,586 Days
• Field of Search: 257679
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0775 arrangements for connecting the integrated circuit to the antenna
• CPC Class Codes: G06K 19/07752 using an interposer
• CPC Class Codes: G08B 13/2417 having a radio frequency identification chip
• CPC Class Codes: G08B 13/2437 Tag layered structure, processes for making layered tags
• CPC Class Codes: Y10T 29/43 Electric condenser making
• CPC Class Codes: Y10T 29/435 Solid dielectric type

Abstract

A MOS RF surveillance and/or identification tag, and methods for its manufacture and use. The tag generally includes an interposer, an antenna and/or inductor on the interposer, and integrated circuitry on the interposer in a location other than the antenna and/or inductor. The integrated circuitry generally has a lowest layer in physical contact with the interposer surface. The method of manufacture generally includes forming a lowest layer of integrated circuitry on an interposer, forming successive layers of the integrated circuitry on the lowest layer of integrated circuitry, and attaching an electrically conductive functional layer to the interposer. Alternatively, an electrically conductive structure may be formed from a functional layer attached to the interposer. The method of use generally includes causing and/or inducing a current in the present tag sufficient for it to generate, reflect or modulate a detectable electromagnetic signal, detecting the signal, and optionally, processing information conveyed by the detectable electromagnetic signal. The present invention advantageously provides a low cost RFID tag capable of operating at MHz frequencies that can be manufactured in a shorter time period than conventional RFID tags that manufacture all active electrical devices on a conventional wafer.

Claims

1. An identification device, comprising:

a) a recess-free interposer;

b) a concentric and/or spiral antenna and/or inductor consisting of a single layer of conductive material attached or affixed to said interposer, said antenna and/or inductor having first and second opposed terminals; and

c) integrated circuitry on a major surface of said interposer, said integrated circuitry being positioned over rings or loops of said antenna and/or inductor and electrically connected at a first location to said first terminal of said antenna and/or inductor and at a second location to said second terminal of said antenna and/or inductor, and said integrated circuitry comprising (i) a plurality of thin film transistors and (ii) conductive structures interconnecting the thin film transistors, the integrated circuitry comprising at least one printed thin film and having a lowest layer in physical contact with said major surface of said interposer, a first successive layer on said lowest layer, and a second successive layer on said first successive layer, wherein said lowest layer and said first and second successive layers taken together comprise an insulating thin film, a metal thin film, and a semiconductor thin film.

2. The device of claim 1, wherein said metal thin film comprises a gate metal thin film.

3. The device of claim 2, wherein said integrated circuitry further comprises a gate insulator layer between said gate metal thin film and said semiconductor thin film.

4. The device of claim 2, wherein said integrated circuitry further comprises source and drain terminals.

5. The device of claim 1, wherein said semiconductor thin film comprises said source and drain terminals.

6. The device of claim 1, wherein said metal thin film comprises a plurality of metal conductors in electrical communication with said gate metal thin film and said source and drain terminals.

7. The device of claim 6, wherein said integrated circuitry further comprises an interlayer dielectric between said metal conductors and said semiconductor thin film.

8. The device of claim 1, wherein said at least one printed thin film comprises a gate metal thin film.

9. The device of claim 1, wherein said at least one printed thin film comprises said dielectric thin film.

10. The device of claim 1, wherein said at least one printed thin film comprises an interconnect metal thin film.

11. The device of claim 1, wherein said interposer comprises a polyimide, a glass/polymer laminate, a high temperature polymer, or a metal foil.

12. The device of claim 11, wherein said interposer comprises said metal foil, and said insulating thin film comprises a dielectric film on said metal foil.

13. The device of claim 1, wherein said antenna and/or inductor comprises said antenna, and said conductive material consists of a metal.

14. A method of reading an identification device, comprising:

a) causing or inducing a current in the device of claim 1 sufficient for the device to radiate, reflect or modulate a detectable electromagnetic signal; and

b) detecting said detectable electromagnetic signal.

15. The method of claim 14, further comprising processing information conveyed by said detectable electromagnetic signal.

16. The method of claim 14, further comprising attaching or affixing the device to or including the device in an item.

17. The device of claim 1, wherein said interposer comprises a glass sheet, a glass/polymer laminate, or a high temperature polymer.

18. The device of claim 17, wherein said interposer comprises said high temperature polymer.

19. The device of claim 18, wherein said high temperature polymer comprises a polyimide, a polyethersulfone, a polyethylene naphthalate (PEN), or a polyether ketone (PEEK) sheet.

20. The device of claim 18, wherein the high temperature polymer comprises a high temperature polymer sheet.

21. The device of claim 18, wherein said interposer comprises a metal foil.

22. The device of claim 21, wherein said metal foil comprises aluminum or stainless steel.

23. The device of claim 21, wherein said metal foil comprises said stainless steel.

24. The device of claim 21, wherein said interposer further comprises a dielectric and/or buffer layer on the metal foil.

25. The device of claim 1, wherein said interposer comprises a flexible material.

26. The device of claim 1, wherein said interposer has a thickness of from 25 μ

m to 200 μ

m.

27. The device of claim 26, wherein said interposer has a thickness of from 50 μ

m to 100 μ

m.

28. The device of claim 1, wherein said interposer has an area larger than 10 mm².

29. The device of claim 1, wherein said integrated circuitry is on a first major surface of said interposer and said antenna and/or inductor is on a second major surface of said interposer opposite to said first surface.

30. The device of claim 1, wherein said interposer has first and second pads thereon in electrical communication with said integrated circuitry, and said antenna and/or inductor has first and second terminals electrically connected to the first and second pads, respectively.

31. The device of claim 30, wherein said integrated circuitry is on a first major surface of said interposer, said antenna and/or inductor is on a second major surface of said interposer opposite to said first major surface, and said first and second terminals are respectively connected to an exposed surface of the first and second pads at locations corresponding to vias in said interposer.

32. The device of claim 1, wherein said first and second opposed terminals of said antenna communicate electrically through said metal thin film and said semiconductor thin film.

33. The device of claim 1, wherein said semiconductor thin film comprises an inorganic semiconductor thin film.

34. The device of claim 33, wherein integrated circuitry comprises CMOS transistors.

35. The device of claim 1, wherein said integrated circuitry has an area substantially greater than an area of a conventional silicon RFID die or chip.

36. The device of claim 1, wherein said integrated circuitry has a first area, said interposer has a second area, and said first area covers a majority of said second area.

37. The device of claim 35, wherein said area of said conventional silicon RFID die or chip is about 0.01 cm².

38. The device of claim 35, wherein said area of said integrated circuitry is substantially greater than about 0.01 cm².