Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same

• US 9,982,177 B2
• Filed: 01/20/2011
• Issued: 05/29/2018
• Est. Priority Date: 03/12/2010
• Status: Active Grant

• Current Assignee: Resonac Corp. (Resonac Holdings Corp.)
• Original Assignee: Hitachi Chemical Company Limited (Resonac Holdings Corp.)
• Inventors: Iwano, Tomohiro, Akimoto, Hirotaka, Narita, Takenori, Kimura, Tadahiro, Ryuzaki, Daisuke
• Primary Examiner(s): Smith, Jennifer A
• Assistant Examiner(s): Christie, Ross J
• Application Number:
  US13/575,078
• Publication Number:
  US 20120322346A1
• Time in Patent Office: 2,686 Days
• Field of Search: None
• CPC Class Codes: B24B 37/044 characterised by the composition of the lapping agent
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: C09K 3/1463 Aqueous liquid suspensions
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step

Abstract

A slurry includes abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. A polishing liquid includes abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.

Claims

1. A slurry comprising abrasive grains and water,

the abrasive grains including particles comprising a hydroxide of tetravalent cerium, the abrasive grains producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

2. The slurry according to claim 1, wherein a mean particle size of the abrasive grains is 1-150 nm.

3. The slurry according to claim 1, wherein a pH is 2.0-9.0.

4. The slurry according to claim 1, wherein a content of the abrasive grains is 0.01-15 mass % based on a total mass of the slurry.

5. The slurry according to claim 1, wherein a content of the particles comprising a hydroxide of tetravalent cerium is 0.01-10 mass % based on a total mass of the slurry.

6. The slurry according to claim 1, wherein the abrasive grains are composed of the particles comprising a hydroxide of tetravalent cerium.

7. A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and second liquid are mixed to form the polishing liquid,

wherein the first liquid is the slurry according to claim 1, and the second liquid comprises an additive and water.

8. The polishing liquid set according to claim 7, wherein a mean particle size of the abrasive grains in the polishing liquid is 1-200 nm.

9. The polishing liquid set according to claim 7, wherein a mean particle size R1 of the abrasive grains in the first liquid and a mean particle size R2 of the abrasive grains in the polishing liquid satisfy the following formula (1).

|R1−

R2|/R1×

100≤

30 

 

(1)

10. The polishing liquid set according to claim 7, wherein the additive is at least one type selected from among dispersing agents, polishing rate improvers, flattening agents and selective ratio improvers.

11. The polishing liquid set according to claim 7, wherein the additive is a vinyl alcohol polymer and/or a vinyl alcohol polymer derivative.

12. The polishing liquid set according to claim 7, wherein a content of the additive in the polishing liquid is 0.01 mass % or greater based on a total mass of the polishing liquid.

21. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,

a step of mixing the first liquid and second liquid of the polishing liquid set according to claim 7 to obtain the polishing liquid, and

a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.

22. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while supplying both the first liquid and second liquid of the polishing liquid set according to claim 7 between the abrasive pad and the film to be polished.

23. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while supplying the slurry according to claim 1 between the abrasive pad and the film to be polished.

24. The slurry according to claim 1, wherein a pH is 3.0-6.0, and a mean particle size of the abrasive grains is 5-120 nm.

13. A polishing liquid comprising abrasive grains, an additive and water,

the abrasive grains including particles comprising a hydroxide of tetravalent cerium, the abrasive grains producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

14. The polishing liquid according to claim 13, wherein a content of the particles comprising a hydroxide of tetravalent cerium is 0.01-8 mass % based on a total mass of the polishing liquid.

15. The polishing liquid according to claim 13, wherein a mean particle size of the abrasive grains is 1-200 nm.

16. The polishing liquid according to claim 13, wherein a pH is 3.0-9.0.

17. The polishing liquid according to claim 13, wherein the additive is at least one type selected from among dispersing agents, polishing rate improvers, flattening agents and selective ratio improvers.

18. The polishing liquid according to claim 13, wherein the additive is a vinyl alcohol polymer and/or a vinyl alcohol polymer derivative.

19. The polishing liquid according to claim 13, wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

20. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to claim 13 between the abrasive pad and the film to be polished.

25. The polishing liquid according to claim 13, wherein a pH is 5.0-8.0, and a mean particle size of the abrasive grains is 15-150 nm.