Method of forming amorphous carbon monolayer and electronic device including amorphous carbon monolayer

• US 9,991,017 B2
• Filed: 05/18/2015
• Issued: 06/05/2018
• Est. Priority Date: 10/16/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Joo, Wonjae, Kim, Unjeong, Hwang, Sungwoo
• Primary Examiner(s): Lee, Cheung
• Assistant Examiner(s): Smith, Stephen C
• Application Number:
  US14/714,902
• Publication Number:
  US 20160111180A1
• Time in Patent Office: 1,114 Days
• CPC Class Codes: C01B 32/186 by chemical vapour deposition [CVD]
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: H01B 1/04 mainly consisting of carbon-silicon compounds, carbon or silicon
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/78684 having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys H01L29/7869 takes precedence
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A method of forming an amorphous carbon monolayer (ACM) and an electronic device including the ACM are provided. The method includes forming the ACM on a surface of a germanium (Ge) substrate via a chemical vapor deposition (CVD) process. The CVD process includes injecting a reaction gas including carbon-containing gas and hydrogen (H₂) gas in to a reaction chamber containing the Ge substrate, wherein a partial pressure of the H₂ gas in the reaction chamber may range from 1 Torr to 30 Torr.

Claims

1. A method of forming an amorphous carbon monolayer (ACM), the method comprising forming the ACM on a surface of a germanium (Ge) substrate via chemical vapor deposition (CVD) process,

wherein the CVD process comprises injecting a reaction gas comprising carbon-containing gas and hydrogen (H₂) gas into a reaction chamber containing the Ge substrate, and

wherein a partial pressure of the H₂ gas in the reaction chamber is in the range of from 1 Torr to 30 Torr,

wherein the ACM is amorphous and is a 2D single carbon atom layer,

wherein a volume ratio of the carbon-containing gas to the H₂ gas is at least 0.05, and

wherein a processing temperature in the reaction chamber is in a range of from 850°

C. to 937°

C.

2. The method of claim 1, wherein a volume ratio of the carbon-containing gas to the H₂ gas is at least 0.1.

3. The method of claim 2, wherein the volume ratio of the carbon-containing gas to the H₂ gas is at least 0.2.

4. The method of claim 1, wherein inert gas is injected into the reaction chamber in addition to the carbon-containing gas and the H₂ gas.

5. The method of claim 1, wherein the Ge substrate is provided on a supporting substrate.

6. The method of claim 5, wherein the supporting substrate comprises a silicon (Si) wafer.

7. The method of claim 5, wherein the supporting substrate comprises SiO₂, Al₂O₃, GaN, quartz, or Ge oxide.

8. The method of claim 5, wherein the Ge substrate is provided on the supporting substrate by CVD, PVD or wafer bonding.

9. The method of claim 1, wherein in the ACM, a ratio of sp³-bonded carbon atoms to sp²-bonded carbon atoms is 0.2 or less.

10. A method of improving the electrical conductivity of a structure containing a graphene layer on a substrate, the method comprising either (1) forming at least one amorphous carbon monolayer (ACM) between the substrate and the graphene layer;

or (2) forming at least one amorphous carbon monolayer (ACM) on the side of the graphene layer furthest from the substrate,

wherein the at least one ACM is amorphous and a 2D single carbon atom layer,

wherein the at least one ACM is formed via chemical vapor deposition (CVD) during which a reaction gas injected into a reaction chamber, and

wherein the reaction gas comprises carbon-containing gas and hydrogen (H₂) gas, and a partial pressure of the H₂ gas in the reaction chamber is in the range of from 1 Torr to 30 Torr,

wherein a volume ratio of the carbon-containing gas to the H₂ gas is at least 0.05, and

wherein a processing temperature in the reaction chamber is in a range of from 850°

C. to 937°

C.

11. The method of claim 10, wherein a volume ratio of the carbon-containing gas to the H₂ gas is at least 0.1.

12. The method of claim 11, wherein the volume ratio of the carbon-containing gas to the H₂ gas is at least 0.2.

13. The method of claim 10, wherein inert gas is injected into the reaction chamber in addition to the carbon-containing gas and the H₂ gas.

14. The method of claim 10, wherein the substrate is provided on a supporting substrate.

15. The method of claim 14, wherein the supporting substrate comprises a silicon (Si) wafer.

16. The method of claim 14, wherein the supporting substrate comprises SiO₂, Al₂O₃, GaN, quartz, or Ge oxide.

17. The method of claim 10, wherein in the ACM, a ratio of sp³-bonded carbon atoms to sp²-bonded carbon atoms is 0.2 or less.