Semiconductor device and manufacturing method thereof

  • US 9,997,638 B2
  • Filed: 05/18/2017
  • Issued: 06/12/2018
  • Est. Priority Date: 02/27/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer including copper;

    a gate insulating layer over the gate electrode layer, the gate insulating layer including silicon and oxygen;

    an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer comprising a channel formation region, the oxide semiconductor layer including indium, gallium, zinc and oxygen; and

    source and drain electrode layers electrically connected to the oxide semiconductor layer, the source and drain electrode layers including copper,wherein the gate electrode layer has a layered structure,wherein the gate insulating layer has a layered structure, andwherein the channel formation region includes a crystal grain which is 1 nm to 10 nm in diameter.

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