Electrodeposition apparatus with virtual anode

  • US RE37,749 E1
  • Filed: 03/02/2000
  • Issued: 06/18/2002
  • Est. Priority Date: 08/01/1990
  • Status: Expired due to Term
First Claim
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1. Apparatus for electrodeposition of a conducting metal onto a semiconductor, said apparatus comprising:

  • diffusion barrier deposition process means to provide a diffusion barrier layer on said semiconductor having contacts and vias, and to prevent metal diffusion into said semiconductor, an electrically conducting nucleation layer deposition process means to provide an electrically conducting nucleation layer on said diffusion barrier layer and a sufficient adhesion surface for electrodeposition of said metal, inert metal mask process means to place a first metal mask layer onto said nucleation layer, selective electrodeposition process means to selectively electrodeposit said metal onto said nucleation layer while simultaneously completely filling a contact or via, electrochemical etching means to increase a radius of curvature of edges of said metal, thereby facilitating planarization and decreasing line-to-line capacitance, and a virtual anode disposed between a cathode and an anode for improving primary current distribution to improve uniformity in a thickness of said metal electrodeposited on said semiconductor.

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