Multi-temperature processing

  • US RE40,264 E1
  • Filed: 05/14/2003
  • Issued: 04/29/2008
  • Est. Priority Date: 10/28/1996
  • Status: Expired due to Term
First Claim
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1. A method of etching a substrate in the manufacture of a device, said method comprising steps of:

  • placing a substrate having a film thereon on a substrate holder in a chamber, said substrate holder having a selected thermal mass; and

    performing a first etching of a first portion of said film at a first temperature and performing a second etching of a second portion of said film at a second temperature, said first temperature being different from said second temperature;

    wherein said selected thermal mass allows a change from said first temperature to said second temperature within a characteristic time period to process said film.

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