MOS image pick-up device and camera incorporating the same

  • US RE41,867 E1
  • Filed: 03/04/2009
  • Issued: 10/26/2010
  • Est. Priority Date: 09/13/2002
  • Status: Active Grant
First Claim
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1. A MOS (metal-oxide-semiconductor) image pick-up device comprising:

  • a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region comprising a driving circuit for operating the imaging region formed on the semiconductor substrate;

    where each of the unit pixels comprises;

    a photodiode, MOS transistors, and a first device-isolation portion comprising a portion next to the photodiode and a portion not next to the photodiode, and the peripheral circuit region comprises a second device-isolation portion for isolating devices in the driving circuit, wherein the following are satisfied;

    I. each of the first device-isolation portion not next to the photodiode and the second device-isolation portion has a structure comprising;

    A. an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm, or B. both an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm and an impurity diffusion region formed within the substrate, and II. each of the first device-isolation portions next to the photodiode has a structure consisting of only an impurity diffusion region formed within the substrate directly under the substrate surface.

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