Semiconductor interconnect formed over an insulation and having moisture resistant material

  • US RE41,980 E1
  • Filed: 11/19/2007
  • Issued: 12/07/2010
  • Est. Priority Date: 09/10/1996
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate bearing semiconductor elements;

    an interlayer insulating film formed on said semiconductor substrate;

    a metal wire layer including plural metal wires formed on said interlayer insulating film;

    a surface protecting film including a first dielectric film with a small dielectric constant for filling at least a part of areas among said metal wires in said metal wire layer and a second dielectric film with a higher moisture absorption preventing function than said first dielectric film for covering said metal wire layer and said first dielectric film, said second dielectric film having a function of suppressing moisture absorption of said first dielectric film;

    an opening for a bonding pad formed in said surface protecting film; and

    a bonding pad forming in said opening for obtaining external electrical connection, wherein said bonding pad and said second dielectric film of said surface protecting film completely cover said first dielectric film within said opening so as not to expose said first dielectric film.

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