Optimized thin film capacitors

• US RE44,998 E1
• Filed: 03/09/2012
• Issued: 07/08/2014
• Est. Priority Date: 07/20/2000
• Status: Expired due to Term

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Blackberry Limited
• Inventors: Oakes, James, Martin, James
• Primary Examiner(s): THOMAS, ERIC W
• Application Number:
  US13/416,810
• Time in Patent Office: 851 Days
• Field of Search: 361303-305, 361/311, 361/306.1, 361/330
• US Class Current: 361/303
• CPC Class Codes: N/A

Abstract

At least an embodiment of the present technology provides a capacitor, comprising a substrate, a first solid electrode disposed on the substrate, a second electrode broken into subsections, the subsections connected by a bus line and separated from the first electric by a dielectric medium. The second electrode broken into subsections may have a lower resistance than the first solid electrode and by changing the width and length of the sides of the subsections, the resistance of the first electrode is modifiable.

Claims

1. A capacitor, comprising:

a substrate;

a first solid electrode disposed on said substrate;

a second electrode broken into subsections, said subsections connected by a bus line and separated from said first electrode by a dielectric medium, wherein said subsections form polygonal, triangle, quadrilateral, or nonagon shapes with internal islands, wherein the polygonal, triangle, quadrilateral and nonagon shapes and the internal islands are connected to said bus line.

2. The capacitor of claim 1, wherein said second electrode broken into subsections has a lower resistance than said first solid electrode.

3. The capacitor of claim 1, wherein said electrode materials are selected from the group consisting of Tungsten, Platinum, Rhodium, Chrome, Titanium/Tungsten and Nickel composites.

4. The capacitor of claim 1, wherein materials for said dielectric medium are selected from the group consisting of tunable ferroelectric materials including barium-strontium titanate Ba_xSr_1-xTiO₃ (BST) and BST composites.

5. The capacitor of claim 1, wherein materials for said substrate are selected from the group consisting of Alumina (Al₂O₃), Aluminum Nitride (AlN), Titania (TiO₂), glass-ceramic composites.

6. The capacitor of claim 1, wherein said bus line is made from materials selected from the group consisting of gold, silver, copper, aluminum, platinum, chrome composites and nickel composites.

7. The capacitor structure of claim 1, wherein said subsections form diamond shapes with internal islands.

8. The capacitor of claim 1, wherein the bus line is connected with the polygonal, triangle, quadrilateral and nonagon shapes and the internal islands of the second electrode to form at least two capacitors in series.

9. The capacitor of claim 1, wherein the bus line is connected with the polygonal, triangle, quadrilateral and nonagon shapes and the internal islands of the second electrode to form capacitors in series without capacitors in parallel.

10. The capacitor of claim 1, wherein the subsections cover a substantial portion of the dielectric medium.

11. The capacitor of claim 1, wherein the first electrode is positioned directly on the substrate.

12. A capacitor, comprising:

a substrate;

a first solid electrode disposed on said substrate;

a second electrode broken into subsections, said subsections connected by a bus line and separated from said first electrode by a dielectric medium, wherein said subsections form diamonds with internal islands, wherein the diamonds are connected to said bus line.

13. The capacitor of claim 12, wherein the second electrode comprises material selected from the group consisting of Tungsten, Platinum, Rhodium, Chrome, Titanium/Tungsten and Nickel composites.

14. The capacitor of claim 12, wherein material for said dielectric medium is selected from the group consisting of tunable ferroelectric materials including barium-strontium titanate Ba_xSr_1-xTiO₃ (BST) and BST composites.

15. The capacitor of claim 12, wherein material for said substrate is selected from the group consisting of Alumina (Al₂O₃), Aluminum Nitride (AlN), Titania (TiO₂), glass-ceramic composites.

16. The capacitor of claim 12, wherein the internal islands are connected to said bus line.

17. The capacitor of claim 12, wherein the bus line is connected with the polygonal, triangle, quadrilateral and nonagon shapes and the internal islands of the second electrode to form at least two capacitors in series.

18. The capacitor of claim 12, wherein the bus line is connected with the polygonal, triangle, quadrilateral and nonagon shapes and the internal islands of the second electrode to form capacitors in series without capacitors in parallel.

19. The capacitor of claim 12, wherein the subsections cover a substantial portion of the dielectric medium.

20. The capacitor of claim 12, wherein the first electrode is positioned directly on the substrate.