Non-volatile memory with improved coupling rate and its making method

Non-volatile memory with improved coupling rate and its making method

  • CN 100,349,298 C
  • Filed: 04/03/2001
  • Issued: 11/14/2007
  • Est. Priority Date: 04/03/2001
  • Status: Active Grant
First Claim
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1. non-volatile memory that increases the coupling ratio is characterized in that:

  • comprising;

    One substrate;

    One most isolated area is formed in this substrate;

    One first conductive layer, be formed on this substrate and the described majority isolated area, the pair of sidewalls of this first conductive layer is formed in vertical mode on each of a described majority isolated area, and wherein the vertical sidewall of this first conductive layer is to form by the dielectric cover curtain with vertical sidewall;

    AndOne second conductive layer is formed on this first conductive layer, and this second conductive layer is isolated this first conductive layer increasing by a surface area with the interface, and then increases the coupling ratio.

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