Polishing pad

Polishing pad

  • CN 100,353,502 C
  • Filed: 10/08/2004
  • Issued: 12/05/2007
  • Est. Priority Date: 10/09/2003
  • Status: Active Grant
First Claim
Patent Images

1. polishing pad that is used for smooth semiconductor substrate, it is that modulus E '"'"' is the polyether polyols with reduced unsaturation material of 100-400MPa under 385-750 l/Pa and 40 ℃

  • and the 1rad/sec at least 0.1 volume %, in the KEL energy loss factor under 40 ℃ and

    the 1rad/sec that this polishing pad comprises porosity, this polyether polyols with reduced unsaturation material is by the prepolymerization reaction product and 4 of toluene di-isocyanate(TDI) and polytetramethylene ether glycol, 4 '"'"'-methylene-two-o-chloraniline forms, and this prepolymerization reaction product has the NCO of 5.5-8.6 weight % and the NH of 80-110% 2With the NCO stoichiometric proportion.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×