Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom

  • CN 100,370,555 C
  • Filed: 08/19/1992
  • Issued: 02/20/2008
  • Est. Priority Date: 08/19/1991
  • Status: Active Grant
First Claim
Patent Images

1. the memory element (30) of an electricity operation comprises:

  • A substrate;

    One that forms more than described substrate electrically contacts bottom (32);

    At the described bottom diffusion barrier layer (34) that electrically contacts formation more than the bottom (32);

    Go up the high capacity storage medium (36) that forms at described bottom diffusion barrier layer (34), described high capacity storage medium (36) is formed by the semiconductor material that comprises at least a chalcogen, but and can between the state of at least two electro-detection, switch according to the electric signal of selected input, wherein, but in the state of each described electro-detection, the described high capacity storage medium of at least a portion (36) is a crystal state;

    Described high capacity storage medium (36), electric signal according to described input, in the whole dynamic range of resistance value, has the multidigit storage capacity, with no matter the previous resistance of described storage medium (36) how, described high capacity storage medium (36) can directly be set at any one resistance in described dynamic range, write or be wiped free of thereby directly cover, do not need to be set to earlier a specific starting value or wipe resistance value earlier;

    The top diffusion barrier layer (38) that more than described high capacity storage medium (36), forms;

    The top electric contacting layer (40) that more than described top diffusion barrier layer (38), forms;

    WithThe top encapsulation layer (44) that on described top layer electric contacting layer (40), forms.

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