Thick oxide layer on botton of trench structure in silicon

Thick oxide layer on botton of trench structure in silicon

  • CN 100,429,785 C
  • Filed: 08/15/2001
  • Issued: 10/29/2008
  • Est. Priority Date: 08/16/2000
  • Status: Active Grant
First Claim
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1. a method that is used to form the gate dielectric layer of channel field-effect pipe is characterized in that, described method comprises the following steps:

  • Formation extends to the raceway groove of silicon area, and described raceway groove is limited by sidewall and bottom;

    Form the ground floor dielectric material that extends along the sidewall and the bottom of raceway groove at least;

    On the ground floor dielectric material, form one deck oxidation and suppress material, wherein, described oxidation suppress material layer have first thickness along trench sidewalls, along trench bottom greater than second thickness of first thickness and along the 3rd thickness greater than second thickness of the silicon area surf zone of contiguous raceway groove;

    The described oxidation of etching suppresses material, suppresses material so that remove described oxidation fully from the bottom of described raceway groove, partly is retained and suppress material along the oxidation that silicon area surf zone trench sidewalls and the contiguous raceway groove in edge extends;

    AndCarry out oxidation processes to form second layer dielectric material in trench bottom, described first and second dielectric layers form has the dielectric layer that is increased to another bigger thickness of trench bottom from a thickness of trench sidewalls;

    Wherein, in oxidation processes, the oxidation that is kept suppresses material and has partly stoped along the oxidation of the silicon of silicon area surf zone trench sidewalls and the contiguous raceway groove in edge.

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