Multilayer semiconductor integrated circuit, light shield used therefor and manufacturing method thereof

Multilayer semiconductor integrated circuit, light shield used therefor and manufacturing method thereof

  • CN 100,483,623 C
  • Filed: 02/20/2003
  • Issued: 04/29/2009
  • Est. Priority Date: 02/20/2003
  • Status: Active Grant
First Claim
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1. , a kind of manufacture method of semiconductor integrated circuit light shield is characterized in that:

  • comprise the following steps;

    Provide one for the layout that is made in the formal pattern of the representative of one on the light shield, have plural lines, and have a unofficial pattern space between each lines in this light shield scope;

    The layout that provides generation exterior deficiency to establish pattern, it comprises the regularly arranged block of plural number;

    Utilize logical operation, with this light shield institute coverage area of this dummy pattern layout mapping to, and in this unofficial pattern space, with these lines respectively at interval under a specific range, set up this dummy pattern layout of phase mapping, and then finish an amalgamation pattern layout;

    AndFinish the entity of light shield makes with this amalgamation pattern layout.

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