Conductive and insulating quasi gallium nitride base growing substrate and manufacturing method thereof

Conductive and insulating quasi gallium nitride base growing substrate and manufacturing method thereof

CN
  • CN 100,487,928 C
  • Filed: 11/01/2005
  • Issued: 05/13/2009
  • Est. Priority Date: 11/01/2005
  • Status: Active Grant
First Claim
Patent Images

1. quasi gallium nitride base substrate, its part comprises:

  • (a) growth substrates;

    Wherein, the material of growth substrates is to select from one group of material, and this group material comprises;

    silicon wafer;

    (b) the first intermediary layer;

    Wherein, the described first intermediary layer comprises;

    other layers of the zinc sulfide layer and the first intermediary layer;

    Wherein, described zinc sulfide layer is laminated on the described growth substrates, and other layers of the first intermediary layer are laminated on the described zinc sulfide layer;

    Wherein, other layers of the described first intermediary layer comprise;

    the single or multiple lift structure, every layer material is to select from one group of material, this group material comprises;

    the binary system and the ternary system of (1) elemental nitrogen, gallium, boron comprise;

    aluminium nitride, low temperature gallium nitride, boron aluminium nitrogen, boron gallium nitrogen and their combination;

    (2) low-melting-point metal layer, the material of described low-melting-point metal layer comprises;

    indium, cadmium, silver and tin;

    (3) high melting point metal layer, the material of described high melting point metal layer comprises;

    gold, hafnium, scandium, Zirconium, vanadium, titanium, chromium, and their combination;

    (4) nitrided metal layer, the material of described nitrided metal layer comprises;

    nitrogenize Zirconium, hafnium nitride, titanium nitride, titanium nitride Zirconium;

    (5) combination of above-mentioned material (1), (2), (3) and (4);

    Wherein, the described low temperature gallium nitride layer superficial layer that is the first intermediary layer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×