Metal-insulating-graphitized carbon field effect transistor

Metal-insulating-graphitized carbon field effect transistor

  • CN 100,499,161 C
  • Filed: 01/11/2003
  • Issued: 06/10/2009
  • Est. Priority Date: 01/11/2003
  • Status: Active Grant
First Claim
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1. , a kind of fet power device is characterized in that:

  • A, fet power device adopt metal-insulation-graphitized carbon MICFET structure, and wherein graphitized carbon is its conducting channel;

    B, for graphitized carbon, in multiple fibre cluster field effect transistor, adopt carbon fiber to make conducting channel;

    In multi-layer stacks condenser type field effect transistor, adopt the thermal decomposition carbon film to make conducting channel;

    C, in the MICFET overall structure, only respectively do a MICFET elementary cell at the two ends of graphitized carbon conducting channel, middle one section is still the graphitized carbon raceway groove, is requiring the especially little application scenario of conducting resistance, interlude is with parcel AL 2O 3The aluminum fiber bundle substitute carbon fiber bundle.

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