Polycrystalline silicon layer of thin film transistor and display thereof

Polycrystalline silicon layer of thin film transistor and display thereof

  • CN 100,511,710 C
  • Filed: 11/27/2002
  • Issued: 07/08/2009
  • Est. Priority Date: 11/27/2001
  • Status: Active Grant
First Claim
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1. the polysilicon layer of a thin-film transistor (TFT) comprising:

  • The active channel district,Wherein, the probability P that oikocryst circle of maximum quantity is present in the active channel district is not 0.5, and this probability P is obtained by following equation;

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