Memory appts.

Memory appts.

  • CN 100,520,955 C
  • Filed: 09/12/2003
  • Issued: 07/29/2009
  • Est. Priority Date: 09/12/2002
  • Status: Active Grant
First Claim
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1. memory storage comprises:

  • At least one reads control signal wire, is used for sending to memory cell reading control signal;

    At least one reads signal wire, be used for according to and read the corresponding startup of reading control signal of control signal wire, the information of memory cell is sent to the outside;

    At least one write control signal line is used for write control signal is sent to memory cell;

    WithAt least one write signal line, be used for according to the startup of the corresponding write control signal of write control signal line, external information is sent to memory cell,Wherein, alternately provide and read signal wire and write signal line, and control and read control signal and write control signal, so that not simultaneously with its startup.

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