Method for making semiconductor side wall fin

Method for making semiconductor side wall fin

  • CN 100,530,567 C
  • Filed: 10/18/2001
  • Issued: 08/19/2009
  • Est. Priority Date: 10/18/2000
  • Status: Active Grant
First Claim
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1. method that forms FET dual gate comprises:

  • On substrate, form the monoxide layer;

    Form a silicon layer on described oxide skin(coating), described silicon layer has first side surface and second side surface;

    Epitaxial growth one etch stop layer on first side surface of described silicon layer;

    Epitaxial growth one raceway groove on described first etch stop layer, described raceway groove have one second sidewall away from a first side wall of described silicon layer first side surface and contiguous described silicon layer first side surface;

    Remove described silicon layer, remove described etch stop layer then, so that expose second sidewall of described raceway groove;

    Form source electrode and drain electrode, wherein a side surface of source electrode and drain electrode contacts the opposed end surface of epitaxially grown described raceway groove;

    AndForm grid, wherein the first side wall of the contiguous epitaxially grown described raceway groove of grid and second sidewall and with they insulation.

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