The non-polarized gallium substrate device of vertical stratification and side epitaxial growth method

The non-polarized gallium substrate device of vertical stratification and side epitaxial growth method

CN
  • CN 100,547,818 C
  • Filed: 05/09/2006
  • Issued: 10/07/2009
  • Est. Priority Date: 05/09/2006
  • Status: Active Grant
First Claim
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1. the non-polarized gallium substrate device of a vertical stratification is characterized in that, comprising:

  • (a) Dao Dian support substrate;

    (b) non-polarized gallium substrate epitaxial loayer;

    Described non-polarized gallium nitride-based epitaxial layer is bonded on the one side of support substrate of described conduction.

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