The manufacture method of semiconductor device

The manufacture method of semiconductor device

  • CN 100,559,592 C
  • Filed: 04/15/2003
  • Issued: 11/11/2009
  • Est. Priority Date: 04/15/2003
  • Status: Active Grant
First Claim
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1. the manufacture method of a semiconductor device is characterized in that,Have:

  • Above semiconductor substrate, form the operation of strong dielectric film as the raw material film of the capacitor dielectric film of ferro-electric materials capacitor,On above-mentioned strong dielectric film, form the operation of upper electrode film as the raw material film of the upper electrode of above-mentioned ferro-electric materials capacitor,Then clean the operation at the back side of above-mentioned semiconductor substrate,Then when removing the carbon that remains on the above-mentioned upper electrode film, on above-mentioned upper electrode film, form the operation of the mask bonding film that contains precious metal element,On the aforementioned mask bonding film, form the operation of hardmask,Utilize above-mentioned hardmask that above-mentioned upper electrode film and above-mentioned strong dielectric film are carried out etched operation;

    The operation that forms above-mentioned upper electrode film comprises;

    form the operation of ground floor iridium oxide-film, the operation of then above-mentioned semiconductor substrate being heat-treated, then form operation than the second layer iridium oxide-film of above-mentioned ground floor iridium thickness of oxidation film on above-mentioned ground floor iridium oxide-film.

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