Chemical vapor deposition unit and method thereof

Chemical vapor deposition unit and method thereof

  • CN 100,573,825 C
  • Filed: 06/15/2005
  • Issued: 12/23/2009
  • Est. Priority Date: 04/11/2005
  • Status: Active Grant
First Claim
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1. , chemical vapor deposition unit comprises the shower nozzle that is used for distributing to the wafer of process chamber inside engineering gas, it is characterized in that:

  • Described shower nozzle comprises the gas distribution face plate (faceplate) that forms a plurality of gas blowing streams, in described a plurality of gas blowing stream at least one stream comprise beginning to described gas distribution face plate flow into first stream of engineering gas with in order to change second stream that the relative described first path direction inclination certain angle forms by the engineering gas flow of described first stream, described second stream begins to extend from an end of described first stream, and formed described second stream has incomparable inconsistent directivity.

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