Semiconductor device and method for manufacturing same

Semiconductor device and method for manufacturing same

  • CN 100,578,787 C
  • Filed: 03/28/2006
  • Issued: 01/06/2010
  • Est. Priority Date: 04/28/2005
  • Status: Active Grant
First Claim
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1. , a kind of semiconductor device, the neighboring area that it has the element area on the Semiconductor substrate be located at and is located at described element area periphery, it is characterized in that, have, be located at the described substrate surface of described neighboring area dielectric film, be located at a plurality of recesses on the described dielectric film, be located at metal level on the described dielectric film, be located at the diaphragm on the described metal level and be located at resin bed on the described diaphragm;

  • Cover a plurality of described recesses by a described metal level.

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