Integration of ALD tantalum nitride for copper metallization

Integration of ALD tantalum nitride for copper metallization

  • CN 100,593,235 C
  • Filed: 06/10/2004
  • Issued: 03/03/2010
  • Est. Priority Date: 06/13/2003
  • Status: Active Grant
First Claim
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1. one kind forms metal interconnected method on Semiconductor substrate, comprising:

  • Before barrier deposition, by in remote plasma source, producing plasma, will be transported to first process chamber that comprises described substrate and the feature that is formed in the dielectric layer contacted with described free radical, clean the electric conducting material that is formed on the described feature in the described dielectric layer and exposes described dielectric layer below from the free radical of described plasma;

    In second process chamber, 1 and 10Torr between pressure and 200 and 300 ℃

    between temperature under, by ald cvd nitride tantalum layer in described feature;

    In the 3rd process chamber, on described tantalum nitride layer, deposit tantalum layer by physical vapour deposition (PVD);

    At the 4th described tantalum layer of process chamber ionic medium body etching and described tantalum nitride layer, in the described tantalum layer at the place, bottom of described feature and at least a portion of described tantalum nitride layer, expose described electric conducting material with removal;

    On described tantalum layer, deposit additional tantalum or copper alternatively by physical vapour deposition (PVD);

    AndIn the 5th process chamber, deposit seed on described electric conducting material and described tantalum layer,Wherein, described first process chamber, described second process chamber, described the 3rd process chamber, described the 4th process chamber and described the 5th process chamber are arranged in integrating device.

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